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LP2301BLT1G - P-Channel MOSFET

Key Features

  • Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM we declare that the material of product compliance with RoHS requirements. ▼ Simple Drive Requirement ▼ Small Package Outline ▼ Surface Mount Device Ordering Information Device Marking LP2301BLT1G 0B Shipping 3000/Tape & Reel LP2301BLT3G 0B 10,000/Tape & Reel LP2301BLT1G 3 1 2 SOT.
  • 23 (TO.
  • 236AB) 3D G 1 S 2.

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Datasheet Details

Part number LP2301BLT1G
Manufacturer LRC
File Size 513.16 KB
Description P-Channel MOSFET
Datasheet download datasheet LP2301BLT1G Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-2.8A = 100 mΩ RDS(ON), Vgs@-2.5V, Ids@-2.0A = 150 mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM we declare that the material of product compliance with RoHS requirements.