LP2301BLT1G
LP2301BLT1G is P-Channel MOSFET manufactured by LRC.
LESHAN RADIO PANY, LTD.
20V P-Channel Enhancement-Mode MOSFET
VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-2.8A = 100 mΩ RDS(ON), Vgs@-2.5V, Ids@-2.0A = 150 mΩ Features
Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM we declare that the material of product pliance with Ro HS requirements.
▼ Simple Drive Requirement ▼ Small Package Outline ▼ Surface Mount Device
Ordering Information
Device
Marking
0B
Shipping 3000/Tape & Reel
LP2301BLT3G
0B
10,000/Tape & Reel
1 2
SOT- 23 (TO- 236AB)
3D
G 1 S 2
Maximum Ratings and Thermal Characteristics (TA = 25o C unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current 1) Maximum Power Dissipation
TA = 25o C TA = 75o C
IDM PD
Operating Junction and Storage Temperature Range
TJ, Tstg
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance (PCB mounted)...
