The LP3407LT1G uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM.
Full PDF Text Transcription for LP3407LT1G (Reference)
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LP3407LT1G. For precise diagrams, and layout, please refer to the original PDF.
LESHAN RADIO COMPANY, LTD. 30V P-Channel Enhancement-Mode MOSFET VDS I D (V GS = -10V) RDS(ON) (VGS = -10V) RDS(ON) (VGS = -4.5V) -30V -4.1A < 70mΩ < 100m Ω FEATURES The ...
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= -10V) RDS(ON) (VGS = -4.5V) -30V -4.1A < 70mΩ < 100m Ω FEATURES The LP3407LT1G uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications. S- Prefix for Automotive and Other Applications Req uiring Uniq ue Site and Control Change Req uirements; AEC-Q101 Qualified and PPAP Capable.
LP3407LT1G Datasheet
