LP3407LT1G-ES Description
The LP3407LT1G-ES is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. Device is suitable for use in DC-DC conversion, power switch and charging circuit.
LP3407LT1G-ES Key Features
- 30V, RDS(ON)=46mΩ(Typ.) @VGS=-10V RDS(ON)=62mΩ(Typ.) @VGS=-4.5V
- Fast Switching
- High density cell design for low RDS(on)
- Material: Halogen free
- Reliable and rugged
- Avalanche Rated
- Low leakage current