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LP3407LT1G-ES - P-channel MOSFET

General Description

The LP3407LT1G-ES is P-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Device is suitable for use in DC-DC conversion, power switch and charging circuit.

Key Features

  • 30V, RDS(ON)=46mΩ(Typ. ) @VGS=-10V RDS(ON)=62mΩ(Typ. ) @VGS=-4.5V.
  • Fast Switching.
  • High density cell design for low RDS(on).
  • Material: Halogen free.
  • Reliable and rugged.
  • Avalanche Rated.
  • Low leakage current 3.

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Datasheet Details

Part number LP3407LT1G-ES
Manufacturer ElecSuper
File Size 828.09 KB
Description P-channel MOSFET
Datasheet download datasheet LP3407LT1G-ES Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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LP3407LT1G-ES Rev-1.2 www.elecsuper.com SuperMOS – SOT-23 -30V BVDSS, 46mΩ RDS(on), P-channel MOSFET 1. Description The LP3407LT1G-ES is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. Device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product LP3407LT1G-ES is Pb-free. 2. Features  30V, RDS(ON)=46mΩ(Typ.) @VGS=-10V RDS(ON)=62mΩ(Typ.) @VGS=-4.5V  Fast Switching  High density cell design for low RDS(on)  Material: Halogen free  Reliable and rugged  Avalanche Rated  Low leakage current 3. Applications  PWM applications  Load switch  Power management in portable/desktop PCs  DC/DC conversion 4.