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LP3407LT1G - P-Channel MOSFET

Key Features

  • The LP3407LT1G uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM.

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Datasheet Details

Part number LP3407LT1G
Manufacturer LRC
File Size 936.34 KB
Description P-Channel MOSFET
Datasheet download datasheet LP3407LT1G Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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LESHAN RADIO COMPANY, LTD. 30V P-Channel Enhancement-Mode MOSFET VDS I D (V GS = -10V) RDS(ON) (VGS = -10V) RDS(ON) (VGS = -4.5V) -30V -4.1A < 70mΩ < 100m Ω FEATURES The LP3407LT1G uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications. S- Prefix for Automotive and Other Applications Req uiring Uniq ue Site and Control Change Req uirements; AEC-Q101 Qualified and PPAP Capable.