LP3407LT1G
LP3407LT1G is P-Channel MOSFET manufactured by LRC.
FEATURES
The LP3407LT1G uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications.
S- Prefix for Automotive and Other Applications Req uiring Uniq ue Site and Control Change Req uirements; AEC-Q101 Qualified and
PPAP Capable.
ORDERING INFORMATION
Device
LP3407LT1G S-LP3407LT1G
LP3407LT3G S-LP3407LT3G
Marking
A07
A07
Shipping
3000/Tape&Reel
10000/Tape&Reel
LP3407LT1G S-LP3407LT1G
1 2
SOT- 23 (TO- 236AB)
MAXIMUM RATINGS (TA = 25o C unless otherwise noted)
Parameter Drain-Source Voltage
Gate-Source Voltage
Continuous Drain TA=25°C
Current
TA=70°C
Pulsed Drain Current C
TA=25°C Power Dissipation B TA=70°C
Junction and Storage Temperature Range
Symbol VDS VGS
TJ, TSTG
Maximum -30 ±20 -4.1 -3.5 -25 1.4 0.9
-55 to 150
Units V V
W °C
THERMAL CHARACTERISTICS (TA = 25o C unless otherwise noted)
Thermal Characteristics...
