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3CA834 - SILICON PNP TRANSISTOR

Features

  • Low collector saturation voltage, collector power dissipation, complementary to 2SD880(3DD880) /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -60 V VCEO -60 V VEBO -7.0 V IC -3.0 A IB -0.5 A PC(Ta=25℃) 1.5 W PC(TC=25℃) 30 W Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test Condition VCEO ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE fT Cob ton tstg tf IC=-50mA VCB=-60V VEB=-7.0V VCE=-5.0V VCE=-5.0V IC=-3.0A VCE=-5.0V VCE=-5.0V VCB=-10V.

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Datasheet Details

Part number 3CA834
Manufacturer LZG
File Size 241.41 KB
Description SILICON PNP TRANSISTOR
Datasheet download datasheet 3CA834 Datasheet

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Full PDF Text Transcription

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2SB834(3CA834) PNP /SILICON PNP TRANSISTOR :。 Purpose: Audio frequency power amplifier applications. :，, 2SD880(3DD880)。 Features: Low collector saturation voltage, collector power dissipation, complementary to 2SD880(3DD880) /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -60 V VCEO -60 V VEBO -7.0 V IC -3.0 A IB -0.5 A PC(Ta=25℃) 1.5 W PC(TC=25℃) 30 W Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test Condition VCEO ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE fT Cob ton tstg tf IC=-50mA VCB=-60V VEB=-7.0V VCE=-5.0V VCE=-5.0V IC=-3.0A VCE=-5.0V VCE=-5.0V VCB=-10V IB=0 IE=0 IC=0 IC=-0.5A IC=-3.0A IB=-0.3A IC=-0.5A IC=-0.5A IE=0 f=1.0MHz -IB1=IB2=0.2A Min -60 60 20 Rating Typ -0.5 -0.7 9.0 150 0.4 1.
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