3CD910 - SILICON PNP TRANSISTOR

Features

Low saturation voltage, excellent hFE linearity and high hFE. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -30 V VCEO -30 V VEBO -5.0 V IC -3.0 A PC 1.25 W PC(TC=25℃) 10 W Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol ICBO IEBO h.
FE V.
CE(sat) V.
BE(sat) fT Test condition VCB=-30V VEB=-5.0V VCE=-3.0V IC=-1.5A IC=-1.5A VCE=-5.0V IE=0 IC=0 IC=-0.5A IB=-0.15A IB=-0.15A IC=-0.5A f=1.0MHz Min 100 5.0 Rating Typ.

LZG

3CD910 silicon pnp transistor by LZG - Datasheet Preview

Datasheet Details

Part number	3CD910
Manufacturer	LZG
File Size	216.72 KB
Description	SILICON PNP TRANSISTOR
Datasheet	3CD910 Datasheet

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Full PDF Text Transcription

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3CD910 PNP /SILICON PNP TRANSISTOR :。 Purpose: Audio frequency amplifier, low voltage regulator. :, hFE 。 Features: Low saturation voltage, excellent hFE linearity and high hFE. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -30 V VCEO -30 V VEBO -5.0 V IC -3.0 A PC 1.25 W PC(TC=25℃) 10 W Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol ICBO IEBO h* FE V* CE(sat) V* BE(sat) fT Test condition VCB=-30V VEB=-5.0V VCE=-3.0V IC=-1.5A IC=-1.5A VCE=-5.0V IE=0 IC=0 IC=-0.5A IB=-0.15A IB=-0.15A IC=-0.5A f=1.0MHz Min 100 5.0 Rating Typ Max -10 -10 400 -1.0 -2.0 Unit μA μA V V MHz *：≤300μS，≤2.0%。 *pulse test: pulse width≤300μS,duty cycle≤2.

Published: Dec 24, 2016 |