LZG Datasheet | Specifications & PDF Download

IRF830(CS830) : DC/DC 。 N-Channel MOSFET/N MOS Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mo

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CSD18504Q5A www.ti.com SLPS366 – JUNE 2012 40V N-Channel NexFET™ Power MOSFETs Check for Samples: CSD18504Q5A 1 FEATURES Ultra Low Qg and Qgd Low Th

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IRFS830(CS830F) N-Channel MOSFET/N MOS : DC/DC 。 Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch

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OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target applications • N-channel,

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2SA1048(3CG1048) PNP /SILICON PNP TRANSISTOR :/Purpose: Audio frequency amplifier applications. :,,, hFE ,, 2SC2458(3DG2458)/Features: Small packa

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IRFS840(CS840F) N-Channel MOSFET/N MOS : DC/DC 。 Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch

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2SA952(3CG952) PNP /SILICON PNP TRANSISTOR :、/Purpose: Output stage of portable radio and cassette type tape recorder, general purpose applications

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OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target applications • N-channel,

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2SA953(3CG953) PNP /SILICON PNP TRANSISTOR :、。/Purpose: Audio frequency amplifier and driver stage. :,hFE ,VCEO 。/Features: High total power dissip

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2SA2050(3CA2050) PNP /SILICON PNP TRANSISTOR ：。 Application: Color TV deflection speed modulating and high-frequency general purpose amplifiers. :,

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IRFS640(CS640F) N-Channel MOSFET/N MOS : DC/DC 。 Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch

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KPT-2012LZGCK-3.0U 2.0 x 1.25 mm SMD Chip LED Lamp DESCRIPTIONS The Green source color devices are made with InGaN on Sapphire Light Emitting Diode E

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TECH. CORP. SPECIFICATIONS CUSTOMER SAMPLE CODE MASS PRODUCTION CODE SAMPLE VERSION SPECIFICATIONS EDITION DRAWING NO. (Ver.) PACKAGING NO. (Ver.)

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BRF6N60(CS6N60F) : DC/DC N-Channel MOSFET/N MOS Purpose: These devices are well suited for high efficiency switching DC/DC converters and switc

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2SA1036K(3CG1036K) PNP /SILICON PNP TRANSISTOR :。 Purpose: Medium power amplifier applications. :，， 2SC2411K（3DG2411K）。 Features: .Large Ic low V

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2SA966(3CG966) PNP /SILICON PNP TRANSISTOR :/Purpose: AF power amplifier applications. : 2SC2236(3DG2236), 3W 。 Features: Complementary to 2SC2236(

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2SC2060(3DG2060) : 1～2W 。 NPN /SILICON NPN TRANSISTOR Purpose:1～2W low frequency amplifiers. :,, 2SA934(3CG934)。 Features: High PC, low collector

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IRFS740(CS740F) N-Channel MOSFET/N MOS : DC/DC 。 Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch

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2SC1213(3DG1213) 2SC1213A(3DG1213A) NPN /SILICON NPN TRANSISTOR :/Purpose: Low frequency amplifier applications . : 2SA673(3CG673)/2SA673A(3CG673A)

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BR2N60(CS2N60) N-CHANNEL MOSFET/N MOS : DC/DC 。 Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch

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