LZG Datasheet | Specifications & PDF Download

APTD2012LZGCK 2.0 x 1.25 mm SMD Chip LED Lamp DESCRIPTIONS  The Green source color devices are made with InGaN on Sapphire Light Emitting Diode  Ele

(75 views)

APTD1608LZGCK 1.6 x 0.8 mm SMD Chip LED Lamp DESCRIPTIONS The Green source color devices are made with InGaN on Sapphire Light Emitting Diode Electros

(71 views)

KPA-2107LZGCK-3.0U 2.1 x 0.6 mm Right Angle Surface LED Lamp DESCRIPTIONS  The Green source color devices are made with InGaN on Sapphire Light Emit

(65 views)

IRF830(CS830) : DC/DC 。 N-Channel MOSFET/N MOS Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mo

(64 views)

KPT-2012LZGCK-3.0U 2.0 x 1.25 mm SMD Chip LED Lamp DESCRIPTIONS The Green source color devices are made with InGaN on Sapphire Light Emitting Diode E

(53 views)

CSD18504Q5A www.ti.com SLPS366 – JUNE 2012 40V N-Channel NexFET™ Power MOSFETs Check for Samples: CSD18504Q5A 1 FEATURES Ultra Low Qg and Qgd Low Th

(43 views)

IRFS830(CS830F) N-Channel MOSFET/N MOS : DC/DC 。 Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch

(42 views)

IRFS840(CS840F) N-Channel MOSFET/N MOS : DC/DC 。 Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch

(36 views)

BR2N60(CS2N60) N-CHANNEL MOSFET/N MOS : DC/DC 。 Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch

(33 views)

OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target applications • N-channel,

(27 views)

BLD123D NPN /SILICON NPN TRANSISTOR : 、、。 Purpose: High frequency electronic lighting ballast applications，converters, inverters, switching regula

(27 views)

IRFS740(CS740F) N-Channel MOSFET/N MOS : DC/DC 。 Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch

(24 views)

2SD313(3DD313) :。 NPN /SILICON NPN TRANSISTOR Purpose: Low frequency power amplifier applications. /Absolute maximum ratings(Ta=25℃) Symbol Rat

(22 views)

2SA1048(3CG1048) PNP /SILICON PNP TRANSISTOR :/Purpose: Audio frequency amplifier applications. :,,, hFE ,, 2SC2458(3DG2458)/Features: Small packa

(22 views)

TECH. CORP. SPECIFICATIONS CUSTOMER SAMPLE CODE MASS PRODUCTION CODE SAMPLE VERSION SPECIFICATIONS EDITION DRAWING NO. (Ver.) PACKAGING NO. (Ver.)

(21 views)

2SA1837(3CA1837) PNP /SILICON PNP TRANSISTOR :。 Purpose: Power amplifier, driver stage amplifier applications. : , 2SC4793(3DA4793)。 Features: High

(21 views)

2N2222(3DG2222) NPN /SILICON NPN TRANSISTOR :。 Purpose: General purpose amplifier. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit

(20 views)

IRFS640(CS640F) N-Channel MOSFET/N MOS : DC/DC 。 Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch

(20 views)

2SA1018(3CG1018) PNP /SILICON PNP TRANSISTOR :/Purpose: General amplifier. :, 2SC1473(3DG1473)。 Features: High VCEO, Complementary pair with 2SC147

(20 views)

2SA952(3CG952) PNP /SILICON PNP TRANSISTOR :、/Purpose: Output stage of portable radio and cassette type tape recorder, general purpose applications

(20 views)