Datasheet4U Logo Datasheet4U.com

IRFS634 - N-Channel MOSFET

Key Features

  • Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VDSS 250 V ID(Tc=25℃) 8.1 A ID(Tc=100℃) 5.1 A IDM 32.4 A VGSS ±30 V EAS 200 mJ EAR 7.4 mJ IAR 8.1 A PD(Tc=25℃) 38 W TJ,TSTG -55 to 150 ℃ /Electrical Characteristics(Ta=25℃) Symbol Test Conditions BVDSS VGS=0V ID=250μA IDSS VDS=250V VDS=200V VGS=0V TC=125℃ IGSS VGS=±30V VDS=0V VGS(th) VDS=VGS ID=250μA RDS(on) VGS=10V ID=4.05A gFS VDS=40V ID=4.05A VSD.

📥 Download Datasheet

Datasheet Details

Part number IRFS634
Manufacturer LZG
File Size 208.51 KB
Description N-Channel MOSFET
Datasheet download datasheet IRFS634 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IRFS634(CS634F) N-Channel MOSFET/N MOS : DC/DC 。 Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,,。 Features: Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VDSS 250 V ID(Tc=25℃) 8.1 A ID(Tc=100℃) 5.1 A IDM 32.4 A VGSS ±30 V EAS 200 mJ EAR 7.4 mJ IAR 8.1 A PD(Tc=25℃) 38 W TJ,TSTG -55 to 150 ℃ /Electrical Characteristics(Ta=25℃) Symbol Test Conditions BVDSS VGS=0V ID=250μA IDSS VDS=250V VDS=200V VGS=0V TC=125℃ IGSS VGS=±30V VDS=0V VGS(th) VDS=VGS ID=250μA RDS(on) VGS=10V ID=4.05A gFS VDS=40V ID=4.05A VSD VGS=0V IS=8.1A Ciss Coss VDS=25V VGS=0V f=1.0MHz Crss td(on) tr td(off) VDD=125V ID=8.