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3CG1015 - SILICON PNP TRANSISTOR

Features

  • High voltage and high current, excellent hFE linearity, low noise, complementary pair with 2SC1815(3DG1815). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -50 V VCEO -50 V VEBO -5.0 V IC -150 mA IB -50 mA PC 400 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) fT Cob NF rbb′ Test condition VCB=-50V IE=0 VEB=-5.0V IC=0 VCE=-6.0V IC=-2.0mA VCE=-6.0V IC=-150mA IC=-100mA IB=-10mA IC=-100.

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Datasheet Details

Part number 3CG1015
Manufacturer LZG
File Size 233.83 KB
Description SILICON PNP TRANSISTOR
Datasheet download datasheet 3CG1015 Datasheet

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Full PDF Text Transcription

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2SA1015(3CG1015) PNP /SILICON PNP TRANSISTOR :,/Purpose: Audio frequency general purpose, driver stage amplifier applications. :,, hFE ,, 2SC1815(3DG1815)。 Features: High voltage and high current, excellent hFE linearity, low noise, complementary pair with 2SC1815(3DG1815). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -50 V VCEO -50 V VEBO -5.0 V IC -150 mA IB -50 mA PC 400 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) fT Cob NF rbb′ Test condition VCB=-50V IE=0 VEB=-5.0V IC=0 VCE=-6.0V IC=-2.0mA VCE=-6.0V IC=-150mA IC=-100mA IB=-10mA IC=-100mA IB=-10mA VCE=-10V IC=-1.0mA VCB=-10V IE=0 f=1.0MHz VCE=-6.0V IC=-0.1mA Rg=10KΩ f=1.
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