* High voltage, low saturation voltage, small collector output capacitance. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -300 V VCEO -300 V VEBO -8.0 V IC -100 mA IB -20 mA PC 400 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test con
3CG1091
LZG
198.97 KB
Silicon pnp transistor.
2SA1091(3CG1091) PNP /SILICON PNP TRANSISTOR :,,/Purpose: High voltage control, plasma display, nixie tube driver, cathode ray tube brightness cont.
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