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3CG1091 - SILICON PNP TRANSISTOR

Features

  • High voltage, low saturation voltage, small collector output capacitance. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -300 V VCEO -300 V VEBO -8.0 V IC -100 mA IB -20 mA PC 400 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition VCBO VCEO ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) fT Cob IC=-0.1mA IC=-1.0mA VCB=-300V VEB=-8.0V VCE=-10V VCE=-10V IC=-20mA IC=-20mA VCE=-10V VCB=-20V IE=0 IE=0 IB=0 IE=0 IC=0 IC=-20mA IC=.

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Datasheet Details

Part number 3CG1091
Manufacturer LZG
File Size 198.97 KB
Description SILICON PNP TRANSISTOR
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Full PDF Text Transcription

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2SA1091(3CG1091) PNP /SILICON PNP TRANSISTOR :,,/Purpose: High voltage control, plasma display, nixie tube driver, cathode ray tube brightness control applications. :,,/Features: High voltage, low saturation voltage, small collector output capacitance. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -300 V VCEO -300 V VEBO -8.0 V IC -100 mA IB -20 mA PC 400 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition VCBO VCEO ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) fT Cob IC=-0.1mA IC=-1.0mA VCB=-300V VEB=-8.0V VCE=-10V VCE=-10V IC=-20mA IC=-20mA VCE=-10V VCB=-20V IE=0 IE=0 IB=0 IE=0 IC=0 IC=-20mA IC=-1.0mA IB=-2.0mA IB=-2.0mA IC=-20mA f=1.
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