3CG1295 - SILICON PNP TRANSISTOR

LZG

Datasheet Details

Large current capacity, low collector to emitter saturation voltage, very small-sized package permitting sets to be made smaller and slimer. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -15 V VCEO -15 V VEBO -5.0 V IC -800 mA ICP -3.0 A PC 200 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition VCBO VCEO VEBO ICBO IEBO hFE(1) hFE(2) VCE(sat)(1) VCE(sat)(2) VBE(sat) fT Cob IC=-10μA IC=-1.0m A IE=-10μA VCB=-12V VCE=-4.0.

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Published: Jul 15, 2017 |