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3CG562 Datasheet Preview

3CG562 Datasheet

SILICON PNP TRANSISTOR

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2SB562(3CG562)
硅 PNP 半导体三极管/SILICON PNP TRANSISTOR
用途:用于低频功率放大。
Purpose: Low frequency power amplifier.
极限参数/Absolute Maximum Ratings(Ta=25℃)
参数符号
数值
单位
Symbol
Rating
Unit
VCBO -25 V
VCEO -20 V
VEBO
-5.0
V
IC
-1.0
A
Icp
-1.5
A
PC 900 mW
Tj 150 ℃
Tstg -55150 ℃
电性能参数/Electrical Characteristics(Ta=25℃)
参数符号
Symbol
VCBO
VCEO
VEBO
ICBO
hFE
VCE(sat)
VBE
fT
Cob
测试条件
Test Condition
IC=-10μA
IE=0
IC=-1.0mA
RBE=∞
IE=-10μA
IC=0
VCB=-20V
IE=0
VCE=-2.0V
IC=-0.5A
IC=-0.8A
IB=-0.08A
VCE=-2.0V
IC=-0.5A
VCE=-2.0V
IC=-0.5A
VCB=-10V IE=0 f=1MHz
最小值
Min
-25
-20
-5.0
85
数值
Rating
典型值
Typ
-0.2
-0.8
350
38
hFE 分档/hFE Classifications: B:85170 C:120240
最大值
Max
-1.0
240
-0.5
-1.0
单位
Unit
V
V
V
μA
V
V
MHz
pF




LZG

3CG562 Datasheet Preview

3CG562 Datasheet

SILICON PNP TRANSISTOR

No Preview Available !

2SB562(3CG562)
http://www.lzg.so


Part Number 3CG562
Description SILICON PNP TRANSISTOR
Maker LZG
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3CG562 Datasheet PDF






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