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3CG953 - SILICON PNP TRANSISTOR

Key Features

  • High total power dissipation, high hFE and high VCEO. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -60 V VCEO -60 V VEBO -5.0 V IC -300 mA IB -60 mA PC 600 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) VBE fT Cob VCB=-60V VEB=-5.0V VCE=-1.0V VCE=-1.0V IC=-300mA IC=-300mA VCE=-6.0V VCE=-6.0V VCB=-6.0V IE=0 IE=0 IC=0 IC=-50mA IC=-300mA IB=-30mA IB=-30mA IC=-10mA IC=-10mA f=1.

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Datasheet Details

Part number 3CG953
Manufacturer LZG
File Size 530.36 KB
Description SILICON PNP TRANSISTOR
Datasheet download datasheet 3CG953 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SA953(3CG953) PNP /SILICON PNP TRANSISTOR :、。/Purpose: Audio frequency amplifier and driver stage. :,hFE ,VCEO 。/Features: High total power dissipation, high hFE and high VCEO. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -60 V VCEO -60 V VEBO -5.0 V IC -300 mA IB -60 mA PC 600 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) VBE fT Cob VCB=-60V VEB=-5.0V VCE=-1.0V VCE=-1.0V IC=-300mA IC=-300mA VCE=-6.0V VCE=-6.0V VCB=-6.0V IE=0 IE=0 IC=0 IC=-50mA IC=-300mA IB=-30mA IB=-30mA IC=-10mA IC=-10mA f=1.0MHz Min 90 30 50 Rating Typ -0.15 -0.85 -0.66 100 13 Max -0.1 -0.1 400 -0.60 -1.20 -0.