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3CG953M - SILICON PNP TRANSISTOR

Key Features

  • High total power dissipation, high hFE and high VCEO. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -60 V VCEO -60 V VEBO -5.0 V IC -300 mA IB -60 mA PC 450 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition Min Rating Typ ICBO VCB=-60V IE=0 IEBO VEB=-5.0V IC=0 hFE(1) VCE=-1.0V IC=-50mA 90 hFE(2) VCE=-1.0V IC=-300mA 30 VCE(sat) IC=-300mA IB=-30mA -0.15 VBE(sat) IC=-300mA IB=-30mA -0.85 VBE VCE=-6.

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Datasheet Details

Part number 3CG953M
Manufacturer LZG
File Size 342.35 KB
Description SILICON PNP TRANSISTOR
Datasheet download datasheet 3CG953M Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SA953M(3CG953M) PNP /SILICON PNP TRANSISTOR :、。/Purpose: Audio frequency amplifier and driver stage. :,hFE ,VCEO 。/Features: High total power dissipation, high hFE and high VCEO. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -60 V VCEO -60 V VEBO -5.0 V IC -300 mA IB -60 mA PC 450 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition Min Rating Typ ICBO VCB=-60V IE=0 IEBO VEB=-5.0V IC=0 hFE(1) VCE=-1.0V IC=-50mA 90 hFE(2) VCE=-1.0V IC=-300mA 30 VCE(sat) IC=-300mA IB=-30mA -0.15 VBE(sat) IC=-300mA IB=-30mA -0.85 VBE VCE=-6.0V IC=-10mA -0.66 fT VCE=-6.0V IC=-10mA 50 100 Cob VCB=-6.0V IE=0 f=1.