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2SA966(3CG966)
PNP /SILICON PNP TRANSISTOR
:/Purpose: AF power amplifier applications. : 2SC2236(3DG2236), 3W 。
Features: Complementary to 2SC2236(3DG2236) and 3 Watts output applications.
/Absolute maximum ratings(Ta=25℃)
Symbol
Rating
Unit
VCBO -30 V
VCEO -30 V
VEBO
-5.0
V
IC
-1.5
A
IE 1.5 A
PC 900 mW
Tj 150 ℃
Tstg -55~150 ℃
/Electrical characteristics(Ta=25℃)
Symbol
Test condition
VCEO VEBO ICBO IEBO hFE VCE(sat) VBE fT Cob
IC=-10mA IE=-1.0mA VCB=-30V VEB=-5.0V VCE=-2.0V IC=-1.5A VCE=-2.0V VCE=-2.0V VCB=-10V
IB=0 IC=0 IE=0 IC=0 IC=-500mA IB=-30mA IC=-500mA IC=-500mA IE=0 f=1.0MHz
Min
-30 -5.0
100
Rating
Typ
120
Max
-0.1 -0.1 320 -2.0 -1.0
30
Unit
V V μA μA
V V MHz pF
hFE /hFE classifications: O:100~200 Y:160~320
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