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2SD313(3DD313)
:。
NPN /SILICON NPN TRANSISTOR
Purpose: Low frequency power amplifier applications. /Absolute maximum ratings(Ta=25℃)
Symbol
Rating
Unit
VCBO VCEO VEBO IC ICP PC(Ta=25℃) PC(TC=25℃) Tj Tstg
60 60 5.0 3.0 8.0 1.75 30 150 -55～150
V V V A A W W ℃ ℃
/Electrical characteristics(Ta=25℃)
Symbol
Test Condition
Rating
Max Unit
Min
Typ
ICBO ICEO IEBO hFE(1) hFE(2) VCE(sat) VBE fT Cob
VCB=20V VCE=60V VEB=4.0V VCE=2.0V VCE=2.0V IC=2.0A VCE=2.0V VCE=5.0V VCB=10V
IE=0 RBE=∞ IC=0 IC=1.0A IC=0.1A IB=0.2A IC=1.0A IC=0.5A f=1.0MHz C:40～80
40 40 0.4 8.0 65 D:60～120 E:100～200
0.1 5.0 1.0 320 1.0 1.5
mA mA mA
V V MHz pF
hFE /hFE Classifications:
F:160～320
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2SD313(3DD313)
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3DD313 Datasheet
