L1SS356T1 - Band Switching Diode

Leshan Radio Company

Key Features

1) Small surface mounting type. 2) High reliability. z Construction Silicon epitaxial planar 1.

L1SS356T1 band switching diode by Leshan Radio Company - Datasheet Preview

Datasheet Details

Part number	L1SS356T1
Manufacturer	Leshan Radio Company
File Size	43.09 KB
Description	Band Switching Diode
Datasheet	L1SS356T1 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
L1SS360TT1G	Monolithic Dual Switching Diode	LRC

Other Datasheets by Leshan Radio Company

Part Number	Description
L1SS356T1G	Band Switching Diode
L1SS355T1	Switching diode
L1SS355T1G	Switching diode
L1SS181LT1	Ultra High Speed Switching
L1SS181LT1G	Ultra High Speed Switching

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

LESHAN RADIO COMPANY, LTD. Band Switching Diode z Applications High frequency switching z Features 1) Small surface mounting type. 2) High reliability. z Construction Silicon epitaxial planar 1 CATHODE 2 ANODE L1SS356T1 1 2 SOD– 323 Driver Marking L1SS356T1 = B Absolute maximum ratings (TA=25°C) Parameter Symbol DC reverse voltage VR DC forward current IF Junction temperature Tj Storage temperature Tstg Limits 35 100 125 -55~+125 Unit V mA °C °C Electrical characteristics (TA=25°C) Parameter Symbol Min. Typ. Max. Unit Forward voltage VF – – 1.0 V Reverse current IR – – 10 nA Capacitance between terminals CT – – 1.2 pF Forward operating resistance rF – – 0.