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L1SS356T1G - Band Switching Diode

Key Features

  • 1) Small surface mounting type. 2) High reliability. 3) We declare that the material of product compliance with RoHS requirements. z Construction Silicon epitaxial planar Driver Marking L1SS356T1G =B Absolute maximum ratings (TA=25°C) Parameter Symbol DC reverse voltage VR DC forward current IF Junction temperature Tj Storage temperature Tstg Limits 35 100 125 -55~+125 L1SS356T1G 1 2 SOD.
  • 323 1.

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Datasheet Details

Part number L1SS356T1G
Manufacturer Leshan Radio Company
File Size 47.82 KB
Description Band Switching Diode
Datasheet download datasheet L1SS356T1G Datasheet

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Full PDF Text Transcription (Reference)

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LESHAN RADIO COMPANY, LTD. Band Switching Diode z Applications High frequency switching z Features 1) Small surface mounting type. 2) High reliability. 3) We declare that the material of product compliance with RoHS requirements. z Construction Silicon epitaxial planar Driver Marking L1SS356T1G =B Absolute maximum ratings (TA=25°C) Parameter Symbol DC reverse voltage VR DC forward current IF Junction temperature Tj Storage temperature Tstg Limits 35 100 125 -55~+125 L1SS356T1G 1 2 SOD– 323 1 CATHODE 2 ANODE Unit V mA °C °C Electrical characteristics (TA=25°C) Parameter Symbol Min. Typ. Max. Unit Forward voltage VF – – 1.0 V Reverse current IR – – 10 nA Capacitance between terminals CT – – 1.2 pF Forward operating resistance rF – – 0.