L1SS356T1 - Band Switching Diode

Features

1) Small surface mounting type. 2) High reliability. z Construction Silicon epitaxial planar 1.

Leshan Radio Company

Datasheet Details

Part number	L1SS356T1
Manufacturer	Leshan Radio Company
File Size	43.09 KB
Description	Band Switching Diode
Datasheet	L1SS356T1 Datasheet
Additional preview pages of the L1SS356T1 datasheet.

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Full PDF Text Transcription

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LESHAN RADIO COMPANY, LTD. Band Switching Diode z Applications High frequency switching z Features 1) Small surface mounting type. 2) High reliability. z Construction Silicon epitaxial planar 1 CATHODE 2 ANODE L1SS356T1 1 2 SOD– 323 Driver Marking L1SS356T1 = B Absolute maximum ratings (TA=25°C) Parameter Symbol DC reverse voltage VR DC forward current IF Junction temperature Tj Storage temperature Tstg Limits 35 100 125 -55~+125 Unit V mA °C °C Electrical characteristics (TA=25°C) Parameter Symbol Min. Typ. Max. Unit Forward voltage VF – – 1.0 V Reverse current IR – – 10 nA Capacitance between terminals CT – – 1.2 pF Forward operating resistance rF – – 0.

Published: Jul 21, 2015 |