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Leshan Radio Company

L2N7002WT1G Datasheet Preview

L2N7002WT1G Datasheet

Small Signal MOSFET

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LESHAN RADIO COMPANY, LTD.
Small Signal MOSFET
115 mAmps, 60 Volts N–Channel SOT–323
FEATURES
1)We declare that the material of product compliant
with RoHS requirements and Halogen Free.
2)ESD Protected:1000V
3)S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
ORDERING INFORMATION
Device
Marking
L2N7002WT1G
6C
L2N7002WT3G
6C
MAXIMUM RATINGS(Ta = 25)
Rating
Drain–Source Voltage
Drain–Gate Voltage (RGS = 1.0 MΩ)
Shipping
3000/Tape&Reel
10000/Tape&Reel
Symbol
VDSS
VDGR
Value
60
60
Drain Current
– Continuous TC = 25C (Note 1.)
TC = 100C (Note 1.)
– Pulsed (Note 2.)
Gate–Source Voltage
– Continuous
– Non–repetitive (tp 50 s)
ID
ID
IDM
VGS
VGSM
±115
±75
±800
±20
±40
L2N7002WT1G
S-L2N7002WT1G
3
1
2
SOT– 323 (SC-70)
Unit
Vdc
Vdc
mAdc
Simplified Schematic
Gate 1
3 Drain
Source 2
Vdc
Vpk
(Top View)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR–5 Board
(Note 3.) TA = 25C
PD
225 mW
Derate above 25C
1.8 mW/C
Thermal Resistance, Junction to Ambient RθJA 556 C/W
Total Device Dissipation
Alumina Substrate,(Note 4.) TA = 25C
Derate above 25C
PD
300 mW
2.4 mW/C
Thermal Resistance, Junction to Ambient Rθ JA 417 C/W
Junction and Storage Temperature
TJ, Tstg -55 to +150
C
1. The Power Dissipation of the package may result in a lower continuous drain current.
2. Pulse Test: Pulse Width 300 μs, Duty Cycle 2.0%.
3. FR–5 = 1.0 x 0.75 x 0.062 in.
4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
May,2015
Rev.A 1/4




Leshan Radio Company

L2N7002WT1G Datasheet Preview

L2N7002WT1G Datasheet

Small Signal MOSFET

No Preview Available !

LESHAN RADIO COMPANY, LTD.
L2N7002WT1G,S-L2N7002WT1G
ELECTRICAL CHARACTERISTICS (Ta= 25)
Characteristic
Symbol Min. Typ. Max. Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 10 μAdc)
Zero Gate Voltage Drain Current
(VGS = 0, VDS = 60 Vdc)
Gate–Body Leakage Current, Forward
T J = 25
TJ = 125
(VGS = 20 Vdc)
V(BR)DSS 60 – – Vdc
IDSS – – 1.0 μAdc
– – 500
IGSSF – –
1 μAdc
Gate–Body Leakage Current, Reverse (VGS = – 20 Vdc)
IGSSR
-1 μAdc
ON CHARACTERISTICS (Note 2.)
Gate Threshold Voltage
(VDS = VGS, ID = 250uAdc)
On–State Drain Current
(VDS 2.0 VDS(on), VGS = 10 Vdc)
Static Drain–Source On–State Voltage
(VGS = 10 Vdc, ID = 500 mAdc)
(VGS = 5.0 Vdc, ID = 50 mAdc)
Static Drain–Source On–State Resistance
(VGS = 10 V, ID = 500 mAdc)
T C = 25
(VGS = 5.0 Vdc, ID = 50 mAdc)
TC = 125
T C = 25
TC = 125
Forward Transconductance
(VDS2.0 VDS(on), ID = 200 mAdc)
VGS(th) 1.0 1.6 2.5
ID(on) 500
Vdc
mA
VDS(on)
Vdc
3.75
0.375
rDS(on)
Ohms
1.4 7.5
– – 13.5
1.8 7.5
– – 13.5
gFS 80 – – mmhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Output Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Ciss 17 50 pF
Coss 10 25 pF
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Crss 2.5 5.0 pF
SWITCHING CHARACTERISTICS (Note 2.)
Turn–On Delay Time (V DD = 25 Vdc , ID =500 mAdc, RG =
Turn–Off Delay Time 25 , RL = 50 , Vgen = 10 V)
BODY–DRAIN DIODE RATINGS
Diode Forward On–Voltage (IS = 115 mAdc, V GS = 0 V)
Source Current Continuous (Body Diode)
Source Current Pulsed
2. Pulse Test: Pulse Width 300 μs, Duty Cycle 2.0%.
td(on) 7 20
td(off) 11 40
ns
ns
VSD – – –1.5 Vdc
IS – – –115 mAdc
ISM – – –800 mAdc
May,2015
Rev.A 3/4


Part Number L2N7002WT1G
Description Small Signal MOSFET
Maker Leshan Radio Company
Total Page 4 Pages
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