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Leshan Radio Company

L2SA1036KQLT1G Datasheet Preview

L2SA1036KQLT1G Datasheet

Medium Power Transistor

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LESHAN RADIO COMPANY, LTD.
Medium Power Transistor
(*32V, *0.5A)
L2SA1036KQLT1G Series
L2SA1036KQLT1G Series
FFeatures
S-L2SA1036KQLT1G Series
1) Large IC.
ICMax. = *500mA
2) Low VCE(sat). Ideal for low-voltage
operation.
3
3) We declare that the material of product
compliance with RoHS requirements.
4) S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
1
2
FStructure
Epitaxial planar type
PNP silicon transistor
SOT– 23
3
FDEVICE MARKING
1) L2SA1036KQLT1G=HQ
S- L2SA1036KQLT1G=HQ
2) L2SA1036KRLT1G=HR
S-L2SA1036KRLT1G=HR
1
2
PNP
FAbsolute maximum ratings (Ta = 25_C)
FORDERING INFORMATION
Device
L2SA1036K*LT1G
L2SA1036K*LT3G
Package
SOT-23
SOT-23
Shipping
3000/Tape & Reel
10000/Tape & Reel
Rev.O 1/4




Leshan Radio Company

L2SA1036KQLT1G Datasheet Preview

L2SA1036KQLT1G Datasheet

Medium Power Transistor

No Preview Available !

LESHAN RADIO COMPANY, LTD.
L 2SA1036KQLT1G Series
S-L2SA1036KQLT1G Series
FElectrical characteristics (Ta = 25_C)
Parameter
Symbol
Collector-base breakdown voltage
BVCBO
Collector-emitter breakdown voltage BVCEO
Emitter-base breakdown voltage
BVEBO
Collector cutoff current
ICBO
Emitter cutoff current
IEBO
Collector-emitter saturation voltage
VCE(sat)
DC current transfer ration
hFE
Transition frequence
fT
Output capacitance
Cob
Min.
40
— 32
—5
120
Typ.
200
7
Max.
—1
—1
— 0.4
390
Unit
V
V
V
µA
µA
V
MHZ
pF
Conditions
IC= — 100µA
Ic= — 1mA
IE= — 100µA
VCB= — 20v
VEB= — 4V
IC/IB= — 100mA/ — 10mA
VCE= — 3V,Ic= — 10mA
VCE= — 5V,IE=20mA,f=100MHz
VCB= — 10V,IE=0A,f=1MHz
FhFE values are classified as follows.
Item Q
R
Hfe
120~270
180~390
Rev.O 2/4


Part Number L2SA1036KQLT1G
Description Medium Power Transistor
Maker Leshan Radio Company
Total Page 4 Pages
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