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Leshan Radio Company

L2SA1774QT3G Datasheet Preview

L2SA1774QT3G Datasheet

General Purpose Transistors

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LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
z We declare that the material of product compliance with RoHS requirements.
z S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
z DEVICE MARKING AND ORDERING INFORMATION
Device
L2SA1774QT1G
S-L2SA1774QT1G
L2SA1774QT3G
S-L2SA1774QT3G
L2SA1774RT1G
S-L2SA1774RT1G
L2SA1774RT3G
S-L2SA1774RT3G
L2SA1774ST1G
S-L2SA1774ST1G
Marking
FQ
FQ
FR
FR
FS
Shipping
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
L2SA1774ST3G
S-L2SA1774ST3G
FS
10000/Tape&Reel
!Absolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
Limits
60
50
6
0.15
Unit
V
V
V
A (DC)
PC 0.15 W
Tj 150 ˚C
Tstg 55~+150 ˚C
L2SA1774QT1G
Series
S-L2SA1774QT1G
Series
SC-89
COLLECTOR
3
1
BASE
2
EMITTER
!Electrical characteristics (Ta=25°C)
Parameter
Symbol
Collector-base breakdown voltage BVCBO
Collector-emitter breakdown voltage BVCEO
Emitter-base breakdown voltage
BVEBO
Collector cutoff current
ICBO
Emitter cutoff current
IEBO
Collector-emitter saturation voltage VCE(sat)
DC current transfer ratio
hFE
Transition frequency
fT
Output capacitance
Cob
Min.
60
50
6
120
Typ.
140
4.0
Max.
0.1
0.1
0.5
560
5.0
Unit
V
V
V
µA
µA
V
MHz
pF
Conditions
IC=−50µA
IC=−1µA
IE=−50µA
VCB=−60V
VEB=−6V
IC/IB=−50mA/5mA
VCE=−6V, IC=−1mA
VCE=−12V, IE=2mA, f=30MHz
VCB=−12V, IE=0A, f=1MHz
!hFE values are classified as follows:
Item Q
R
hFE 120~270 180~390
S
270~560
Rev.O 1/3




Leshan Radio Company

L2SA1774QT3G Datasheet Preview

L2SA1774QT3G Datasheet

General Purpose Transistors

No Preview Available !

!Electrical characteristic curves
50
Ta=100˚C
20 25˚C
40˚C
10
VCE=6V
5
2
1
0.5
0.2
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded emitter propagation
characteristics
LESHAN RADIO COMPANY, LTD.
L2SA1774QT1G
Series
S-L2SA1774QT1G
Series
10
Ta=25˚C
35.0
31.5
8 28.0
24.5
6 21.0
17.5
4 14.0
10.5
2 7.0
3.5µA
IB=0
0 0.4 0.8 1.2 1.6 2.0
COLLECTOR TO MITTER VOLTAGE : VCE (V)
Fig.2 Grounded emitter output
characteristics (I)
100
Ta=25˚C
500
80 450
400
350
300
60
250
200
40 150
100
20
50µA
IB=0
0 1 2 3 4 5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.3 Grounded emitter output
characteristics (II)
500
Ta=25˚C
200
VCE=5V
3V
1V
100
50
0.2 0.5 1 2 5 10 20 50 100
COLLECTOR CURRENT : IC (mA)
Fig.4 DC current gain vs.
collector current (I)
500
Ta=100˚C
25˚C
200 40˚C
100
50
0.2 0.5 1 2
VCE=6V
5 10 20 50 100
COLLECTOR CURRENT : IC (mA)
Fig.5 DC current gain vs.
collector current (II)
1
Ta=25˚C
0.5
0.2
0.1
0.05
IC/IB=50
20
10
0.2 0.5 1 2 5 10 20 50 100
COLLECTOR CURRENT : IC (mA)
Fig.6 Collector-emitter saturation
voltage vs. collector current (I)
1
0.5
lC/lB=10
1000
500
Ta=25˚C
VCE=12V
0.2
0.1
0.05
Ta=100˚C
25˚C
40˚C
0.2 0.5 1 2 5 10 20 50 100
COLLECTOR CURRENT : IC (mA)
Fig.7 Collector-emitter saturation
voltage vs. collector current (II)
200
100
50
0.5 1 2
5 10 20 50 100
EMITTER CURRENT : IE (mA)
Fig.8 Gain bandwidth product vs.
emitter current
20
Cib
10
Ta=25˚C
f=1MHz
IE=0A
IC=0A
Cob
5
2
0.5 1 2
5 10 20
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.9 Collector output capacitance vs.
collector-base voltage
Emitter inputcapacitance vs.
emitter-base voltage
Rev.O 2/3


Part Number L2SA1774QT3G
Description General Purpose Transistors
Maker Leshan Radio Company
Total Page 3 Pages
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