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L2SC3356LT1 Datasheet - Leshan Radio Company

High-Frequency Amplifier Transistor

L2SC3356LT1 Features

* Low Noise and High Gain NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz

* High Power Gain MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltag

L2SC3356LT1 Datasheet (166.32 KB)

Preview of L2SC3356LT1 PDF

Datasheet Details

Part number:

L2SC3356LT1

Manufacturer:

Leshan Radio Company

File Size:

166.32 KB

Description:

High-frequency amplifier transistor.

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L2SC3356LT1 High-Frequency Amplifier Transistor Leshan Radio Company

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