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L2SC3356LT1 Datasheet, Leshan Radio Company

L2SC3356LT1 Datasheet, Leshan Radio Company

L2SC3356LT1

datasheet Download (Size : 166.32KB)

L2SC3356LT1 Datasheet

L2SC3356LT1 transistor equivalent, high-frequency amplifier transistor.

L2SC3356LT1

datasheet Download (Size : 166.32KB)

L2SC3356LT1 Datasheet

Features and benefits


* Low Noise and High Gain NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz
* High Power Gain MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1..

Description

www.DataSheet4U.com 1 2 The L2SC3356LT1 is an NPN silicon epitaxial transistor designed for It has dynamic range and good current characteristic. low noise amplifier at VHF, UHF and CATV band. SOT-23 FEATURES
* Low Noise and High Gain NF = 1.

Image gallery

L2SC3356LT1 Page 1 L2SC3356LT1 Page 2 L2SC3356LT1 Page 3

TAGS

L2SC3356LT1
High-Frequency
Amplifier
Transistor
Leshan Radio Company

Manufacturer


Leshan Radio Company

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