L2SC3356LT1G
L2SC3356LT1G is High-Frequency Amplifier Transistor manufactured by Leshan Radio Company.
DESCRIPTION
The L2SC3356LT1 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic.
ORDERING INFORMATION
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Device L2SC3356LT1G L2SC3356LT3G
Marking R24 R24
Shipping 3000/Tape & Reel 10000/Tape & Reel
SOT-23
FEATURES
- We declare that the material of product pliance with Ro HS requirements.
- Low Noise and High Gain NF = 1.1 d B TYP., Ga = 11 d B TYP. @VCE = 10 V, IC = 7 m A, f = 1.0 GHz
- High Power Gain MAG = 13 d B TYP. @VCE = 10 V, IC = 20 m A, f = 1.0 GHz
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PT Tj Tstg
65
20 12 3.0 100 200 150 to +150
V V V m A m W
C C
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTIC Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Feed-Back Capacitance Insertion Power Gain Noise Figure SYMBOL ICBO IEBO h FE f T Cre-
- 82 170 7 0.55 11.5 1.1 2.0 1.0 MIN. TYP. MAX. 1.0 1.0 270 GHz p F d B d B UNIT TEST CONDITIONS VCB = 10 V, IE = 0 VEB = 1.0 V, IC = 0 VCE = 10 V, IC = 20 m A VCE = 10 V, IC = 20 m A VCB = 10 V, IE = 0, f = 1.0 MHz VCE = 10 V, IC = 20 m A, f = 1.0 GHz VCE = 10 V, IC = 7 m A, f = 1.0 GHz
A A
S21e2
- Pulse Measurement PW 350 s, Duty Cycle 2 %
- The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance bridge.
Driver Marking L2SC3356LT1G=R24
1/4
LESHAN RADIO PANY, LTD.
TYPICAL CHARACTERISTICS (TA = 25 C)
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 2
FEED-BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE f = 1.0 MHz
PT-Total Power Dissipation-m W
Cre-Feed-back Capacitance-p F
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