• Part: L2SC3356WT1G
  • Description: High-Frequency Amplifier Transistor
  • Manufacturer: Leshan Radio Company
  • Size: 157.13 KB
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Datasheet Summary

DATA SHEET LESHAN RADIO PANY, LTD. DESCRIPTION The L2SC3356WT1is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. L2SC3356WT1G S-L2SC3356WT1G ORDERING INFORMATION Device L2SC3356WT1G S-L2SC3356WT1G L2SC3356WT3G S-L2SC3356WT3G Marking 24 24 Shipping 3000/Tape & Reel 10000/Tape & Reel 1 2 SC-70 Features - We declare that the material of product pliance with RoHS requirements. - Low Noise and High Gain NF = 1.1 dB TYP., Ga = 11 dB TYP....