L2SC3356WT1G - High-Frequency Amplifier Transistor

Product Overview

Leshan Radio Company

Datasheet Details

Part number	L2SC3356WT1G
Manufacturer	Leshan Radio Company
File Size	157.13 KB
Description	High-Frequency Amplifier Transistor
Datasheet	L2SC3356WT1G Datasheet
Additional preview pages of the L2SC3356WT1G datasheet.

Product details

Description

The L2SC3356WT1is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band.It has dynamic range and good current characteristic.S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.L2SC3356WT1G S-L2SC3356WT1G 3 ORDERING INFORMATION Device L2SC3356WT1G S-L2SC3356WT1G L2SC3356WT3G S-L2SC3356WT3G Marking 24 24 Shipping 3000/Tape & Reel 10000/Tape & Reel 1 2 SC-70 FEA

Features

We declare that the material of product compliance with RoHS requirements.
Low Noise and High Gain NF = 1.1 dB TYP. , Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz.
High Power Gain MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz.

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Published: Aug 7, 2015 |