L2SC3356LT1 Description
1 2 The L2SC3356LT1 is an NPN silicon epitaxial transistor designed for It has dynamic range and good current characteristic. low noise amplifier at VHF, UHF and CATV band.
L2SC3356LT1 Key Features
- Low Noise and High Gain NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz
- High Power Gain MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz