• Part: L2SC3356LT1
  • Description: High-Frequency Amplifier Transistor
  • Category: Transistor
  • Manufacturer: Leshan Radio Company
  • Size: 166.32 KB
Download L2SC3356LT1 Datasheet PDF
Leshan Radio Company
L2SC3356LT1
L2SC3356LT1 is High-Frequency Amplifier Transistor manufactured by Leshan Radio Company.
DESCRIPTION .. 1 2 The L2SC3356LT1 is an NPN silicon epitaxial transistor designed for It has dynamic range and good current characteristic. low noise amplifier at VHF, UHF and CATV band. SOT-23 FEATURES - Low Noise and High Gain NF = 1.1 d B TYP., Ga = 11 d B TYP. @VCE = 10 V, IC = 7 m A, f = 1.0 GHz - High Power Gain MAG = 13 d B TYP. @VCE = 10 V, IC = 20 m A, f = 1.0 GHz ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PT Tj Tstg 65 20 12 3.0 100 200 150 to +150 V V V m A m W C C ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTIC Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Feed-Back Capacitance Insertion Power Gain Noise Figure SYMBOL ICBO IEBO h FE f T Cre- - 82 170 7 0.55 11.5 1.1 2.0 1.0 MIN. TYP. MAX. 1.0 1.0 270 GHz p F d B d B UNIT TEST CONDITIONS VCB = 10 V, IE = 0 VEB = 1.0 V, IC = 0 VCE = 10 V, IC = 20 m A VCE = 10 V, IC = 20 m A VCB = 10 V, IE = 0, f = 1.0 MHz VCE = 10 V, IC = 20 m A, f = 1.0 GHz VCE = 10 V, IC = 7 m A, f = 1.0 GHz A A S21e2 - Pulse Measurement PW 350 s, Duty Cycle 2 % - - The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance bridge. Driver Marking L2SC3356LT1=R24 L2SC3356LT1-1/4 LESHAN RADIO PANY, LTD. TYPICAL CHARACTERISTICS (TA = 25 C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 2 FEED-BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE PT-Total Power Dissipation-m W Cre-Feed-back Capacitance-p F Free Air f = 1.0 MHz .. 0.3...