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L2SC3356WT3G - High-Frequency Amplifier Transistor

This page provides the datasheet information for the L2SC3356WT3G, a member of the L2SC3356WT1G High-Frequency Amplifier Transistor family.

Datasheet Summary

Description

low noise amplifier at VHF, UHF and CATV band.

It has dynamic range and good current characteristic.

Features

  • We declare that the material of product compliance with RoHS requirements.
  • Low Noise and High Gain NF = 1.1 dB TYP. , Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz.
  • High Power Gain MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz.

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Datasheet Details

Part number L2SC3356WT3G
Manufacturer Leshan Radio Company
File Size 157.13 KB
Description High-Frequency Amplifier Transistor
Datasheet download datasheet L2SC3356WT3G Datasheet
Additional preview pages of the L2SC3356WT3G datasheet.

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Full PDF Text Transcription

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DATA SHEET LESHAN RADIO COMPANY, LTD. DESCRIPTION The L2SC3356WT1is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. L2SC3356WT1G S-L2SC3356WT1G 3 ORDERING INFORMATION Device L2SC3356WT1G S-L2SC3356WT1G L2SC3356WT3G S-L2SC3356WT3G Marking 24 24 Shipping 3000/Tape & Reel 10000/Tape & Reel 1 2 SC-70 FEATURES • We declare that the material of product compliance with RoHS requirements. • Low Noise and High Gain NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz • High Power Gain MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.
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