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L2SD2114KWLT1 Datasheet, Leshan Radio Company

L2SD2114KWLT1 transistor equivalent, epitaxial planar type npn silicon transistor.

L2SD2114KWLT1 Avg. rating / M : 1.0 rating-19

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L2SD2114KWLT1 Datasheet

Features and benefits

1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) www.DataSheet4U.com3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA /.

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Epitaxial
planar
type
NPN
silicon
transistor
L2SD2114KWLT1G
L2SD2114KWLT3G
L2SD2114KVLT1
Leshan Radio Company
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