L2SD2114KWLT1G - Epitaxial planar type NPN silicon transistor

Product Overview

Leshan Radio Company

Part number	L2SD2114KWLT1G
Manufacturer	Leshan Radio Company
File Size	109.27 KB
Description	Epitaxial planar type NPN silicon transistor
Datasheet	L2SD2114KWLT1G Datasheet
Note	This datasheet PDF includes multiple part numbers: L2SD2114KWLT1G, L2SD2114KxLT1. Please refer to the document for exact specifications by model.
Additional preview pages of the L2SD2114KWLT1G datasheet.

1) High DC current gain. hFE = 1200 (Typ. ) 2) High emitter-base voltage. VEBO =12V (Min. ) www. DataSheet4U. com3) Low VCE (sat). VCE (sat) = 0.18V (Typ. ) (IC / IB = 500mA / 20mA) 4) Pb-Free package is available. L2SD2114K.
LT1 3 1 2 SOT.
23 (TO.
236AB) zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Collector-base voltage Collector-emitter voltage Emitter-base voltage VCBO VCEO VEBO Collector current IC Collector power dissipation Junction temperature Storage temper.

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Published: Aug 11, 2015 |