L2SD2114KWLT1G Description
Epitaxial planar type NPN silicon transistor zFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) ..3) Low VCE (sat).
- Part: L2SD2114KWLT1G
- Manufacturer: Leshan Radio Company
- Size: 109.27 KB
Related Leshan Radio Company Datasheets
| Part Number | Description |
|---|---|
| L2SD2114KWLT1 | Epitaxial planar type NPN silicon transistor |
| L2SD2114KWLT3G | NPN silicon transistor |
| L2SD2114KVLT1 | Epitaxial planar type NPN silicon transistor |
| L2SD2114KVLT1G | Epitaxial planar type NPN silicon transistor |
| L2SD2114KVLT3G | NPN silicon transistor |