• Part: L2SD2114KVLT1G
  • Description: Epitaxial planar type NPN silicon transistor
  • Category: Transistor
  • Manufacturer: Leshan Radio Company
  • Size: 109.27 KB
Download L2SD2114KVLT1G Datasheet PDF
Leshan Radio Company
L2SD2114KVLT1G
L2SD2114KVLT1G is Epitaxial planar type NPN silicon transistor manufactured by Leshan Radio Company.
- Part of the L2SD2114KxLT1 comparator family.
LESHAN RADIO PANY, LTD. Epitaxial planar type NPN silicon transistor z Features 1) High DC current gain. h FE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) ..3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500m A / 20m A) 4) Pb-Free package is available. L2SD2114K- LT1 3 1 2 SOT- 23 (TO- 236AB)...