This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | L2SD2114KVLT1G |
|---|---|
| Datasheet | L2SD2114KVLT1G L2SD2114KxLT1 Datasheet (PDF) |
| File Size | 109.27 KB |
| Manufacturer | Leshan Radio Company |
| Description | Epitaxial planar type NPN silicon transistor |
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Epitaxial planar type NPN silicon transistor zFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) ..3) Low VCE (sat).
See all Leshan Radio Company datasheets
| Part Number | Description |
|---|---|
| L2SD2114KVLT1 | Epitaxial planar type NPN silicon transistor |
| L2SD2114KVLT3G | NPN silicon transistor |
| L2SD2114KWLT1 | Epitaxial planar type NPN silicon transistor |
| L2SD2114KWLT1G | Epitaxial planar type NPN silicon transistor |
| L2SD2114KWLT3G | NPN silicon transistor |
| L2SD1781KQLT1 | Medium Power Transistor |
| L2SD1781KQLT1G | Medium Power Transistor |
| L2SD1781KQLT3G | Medium Power Transistor |
| L2SD1781KRLT1 | Medium Power Transistor |
| L2SD1781KRLT1G | Medium Power Transistor |
