L2SD2114KWLT3G
L2SD2114KWLT3G is NPN silicon transistor manufactured by Leshan Radio Company.
- Part of the L2SD2114KVLT3G comparator family.
- Part of the L2SD2114KVLT3G comparator family.
Epitaxial planar type
LESHAN RADIO PANY, LTD.
NPN silicon transistor
L2SD2114KVLT1G Series z Features
1) High DC current gain.
S-L2SD2114KVLT1G Series h FE = 1200 (Typ.)
2) High emitter-base voltage. VEBO =12V (Min.)
3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500m A / 20m A)
1 2
4) We declare that the material of product pliance with Ro HS requirements.
5) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
SOT- 23 (TO- 236AB)...
