L2SD2114KWLT3G Datasheet NPN silicon transistor

Manufacturer: Leshan Radio Company

Overview: Epitaxial planar type LESHAN RADIO COMPANY, LTD. NPN silicon transistor L2SD2114KVLT1G Series.

Download the L2SD2114KWLT3G datasheet PDF. This datasheet also includes the L2SD2114KVLT3G variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

L2SD2114KWLT3G npn silicon transistor by Leshan Radio Company - Datasheet Preview

Datasheet Details

Part number	L2SD2114KWLT3G
Manufacturer	Leshan Radio Company
File Size	99.50 KB
Description	NPN silicon transistor
Download	L2SD2114KWLT3G Download (PDF)

Key Features

1) High DC current gain. S-L2SD2114KVLT1G Series hFE = 1200 (Typ. ) 2) High emitter-base voltage. VEBO =12V (Min. ) 3 3) Low VCE (sat). VCE (sat) = 0.18V (Typ. ) (IC / IB = 500mA / 20mA) 1 2 4) We declare that the material of product compliance with RoHS requirements. 5) S- Prefix for Automotive and Other.

L2SD2114KWLT3G Distributor & Price

Compare L2SD2114KWLT3G distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.

More Datasheets from Leshan Radio Company

Part Number	Description
L2SD2114KWLT1	Epitaxial planar type NPN silicon transistor
L2SD2114KWLT1G	Epitaxial planar type NPN silicon transistor
L2SD2114KVLT1	Epitaxial planar type NPN silicon transistor
L2SD2114KVLT1G	Epitaxial planar type NPN silicon transistor
L2SD2114KVLT3G	NPN silicon transistor
L2SD1781KQLT1	Medium Power Transistor
L2SD1781KQLT1G	Medium Power Transistor
L2SD1781KQLT3G	Medium Power Transistor
L2SD1781KRLT1	Medium Power Transistor
L2SD1781KRLT1G	Medium Power Transistor