Datasheet4U Logo Datasheet4U.com

L2SD2114KVLT1 - Epitaxial planar type NPN silicon transistor

This page provides the datasheet information for the L2SD2114KVLT1, a member of the L2SD2114KxLT1 Epitaxial planar type NPN silicon transistor family.

Datasheet Summary

Features

  • 1) High DC current gain. hFE = 1200 (Typ. ) 2) High emitter-base voltage. VEBO =12V (Min. ) www. DataSheet4U. com3) Low VCE (sat). VCE (sat) = 0.18V (Typ. ) (IC / IB = 500mA / 20mA) 4) Pb-Free package is available. L2SD2114K.
  • LT1 3 1 2 SOT.
  • 23 (TO.
  • 236AB) zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Collector-base voltage Collector-emitter voltage Emitter-base voltage VCBO VCEO VEBO Collector current IC Collector power dissipation Junction temperature Storage temper.

📥 Download Datasheet

Datasheet preview – L2SD2114KVLT1

Datasheet Details

Part number L2SD2114KVLT1
Manufacturer Leshan Radio Company
File Size 109.27 KB
Description Epitaxial planar type NPN silicon transistor
Datasheet download datasheet L2SD2114KVLT1 Datasheet
Additional preview pages of the L2SD2114KVLT1 datasheet.

📁 Similar Datasheet

Other Datasheets by Leshan Radio Company

Full PDF Text Transcription

Click to expand full text
LESHAN RADIO COMPANY, LTD. Epitaxial planar type NPN silicon transistor zFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) www.DataSheet4U.com3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) 4) Pb-Free package is available. L2SD2114K*LT1 3 1 2 SOT– 23 (TO–236AB) zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Collector-base voltage Collector-emitter voltage Emitter-base voltage VCBO VCEO VEBO Collector current IC Collector power dissipation Junction temperature Storage temperature ∗ Single pulse Pw=100ms PC Tj Tstg Limits 25 20 12 0.5 1 0.
Published: |