L2SD2114KVLT3G - NPN silicon transistor

Datasheet Summary

Features

1) High DC current gain. S-L2SD2114KVLT1G Series hFE = 1200 (Typ. ) 2) High emitter-base voltage. VEBO =12V (Min. ) 3 3) Low VCE (sat). VCE (sat) = 0.18V (Typ. ) (IC / IB = 500mA / 20mA) 1 2 4) We declare that the material of product compliance with RoHS requirements. 5) S- Prefix for Automotive and Other.

Leshan Radio Company

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Datasheet Details

Part number	L2SD2114KVLT3G
Manufacturer	Leshan Radio Company
File Size	99.50 KB
Description	NPN silicon transistor
Datasheet	L2SD2114KVLT3G Datasheet
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Full PDF Text Transcription

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Epitaxial planar type LESHAN RADIO COMPANY, LTD. NPN silicon transistor L2SD2114KVLT1G Series zFeatures 1) High DC current gain. S-L2SD2114KVLT1G Series hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) 1 2 4) We declare that the material of product compliance with RoHS requirements. 5) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

Published: Aug 11, 2015 |