L2SD2114KVLT3G Description
Epitaxial planar type LESHAN RADIO PANY, LTD. NPN silicon transistor L2SD2114KVLT1G Series zFeatures 1) High DC current gain. S-L2SD2114KVLT1G Series hFE = 1200 (Typ.) 2) High emitter-base voltage.
- Part: L2SD2114KVLT3G
- Manufacturer: Leshan Radio Company
- Size: 99.50 KB
Related Leshan Radio Company Datasheets
| Part Number | Description |
|---|---|
| L2SD2114KVLT1 | Epitaxial planar type NPN silicon transistor |
| L2SD2114KVLT1G | Epitaxial planar type NPN silicon transistor |
| L2SD2114KWLT1 | Epitaxial planar type NPN silicon transistor |
| L2SD2114KWLT1G | Epitaxial planar type NPN silicon transistor |
| L2SD2114KWLT3G | NPN silicon transistor |