L2SD2114KVLT3G - NPN silicon transistor

Product Overview

Leshan Radio Company

Part number	L2SD2114KVLT3G
Manufacturer	Leshan Radio Company
File Size	99.50 KB
Description	NPN silicon transistor
Datasheet	L2SD2114KVLT3G Datasheet
Additional preview pages of the L2SD2114KVLT3G datasheet.

1) High DC current gain. S-L2SD2114KVLT1G Series hFE = 1200 (Typ. ) 2) High emitter-base voltage. VEBO =12V (Min. ) 3 3) Low VCE (sat). VCE (sat) = 0.18V (Typ. ) (IC / IB = 500mA / 20mA) 1 2 4) We declare that the material of product compliance with RoHS requirements. 5) S- Prefix for Automotive and Other.

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Published: Aug 11, 2015 |