* (mV/ °C) -55°C to +125°C 1.2 1.6 2.0 2.4 2.8 0.02 0.1 1.0 IB, BASE CURRENT (mA) 10 20 0.2 10 1.0 IC, COLLECTOR CURRENT (mA) 100 Figure 15. Collector Saturation Region Figure 16. Base
* Emitter Temperature Coefficient fă, T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) 400 300 200 VCE = 10 V
LBC847BPDW1T1 Datasheet (283.51 KB)
LBC847BPDW1T1
Leshan Radio Company
283.51 KB
(lbc84xxpdw1t1) dual general purpose transistors npn/pnp duals.
LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors www.datasheet4u.com NPN/PNP Duals (Complimentary) These transistors are designed for gen.
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