LMBT3904WT1
LMBT3904WT1 is Transistor manufactured by Leshan Radio Company.
LESHAN RADIO PANY, LTD.
General Purpose Transistors
NPN and PNP Silicon
These transistors are designed for general purpose amplifier applications. They are housed in the SOT- 323/SC- 70 which is designed for low power surface mount applications. .. ƽ Pb-Free Package is available.
NPN LMBT3904WT1 PNP LMBT3906WT1
GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT
DEVICE MARKING AND ORDERING INFORMATION
Device LMBT3904WT1 LMBT3904WT1G LMBT3906WT1 LMBT3906WT1G Marking AM AM (Pb-Free) 2A 2A (Pb-Free) Package SOT-323/SC-70 SOT-323/SC-70 SOT-323/SC-70 SOT-323/SC-70 Shipping 3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel
1 2
MAXIMUM RATINGS
Rating Collector- Emitter Voltage Collector- Base Voltage Emitter- Base Voltage Collector Current
- Continuous LMBT3904WT1 LMBT3906WT1 LMBT3904WT1 LMBT3906WT1 LMBT3904WT1 LMBT3906WT1 LMBT3904WT1 LMBT3906WT1 Symbol V CEO V CBO V
CASE 419- 02, STYLE 3 SOT- 323 / SC- 70
Value 40
- 40 60
- 40 6.0
- 5.0 200
- 200
Unit Vdc Vdc Vdc m Adc
1 BASE 2 EMITTER 3 COLLECTOR
3 COLLECT OR
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation (1) T A =25 °C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD R θJA T J , T stg Max 150 833
- 55 to +150 Unit m W °C/W °C
1 B ASE
2 EMIT T ER
LMBT3906WT1
LMBT3904/6WT1-1/11
LESHAN RADIO PANY, LTD.
NPN LMBT3904WT1
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
PNP LMBT3906WT1
OFF CHARACTERISTICS
Collector- Emitter Breakdown Voltage (2) (I C = 1.0 m Adc, I B = 0) (I C =
- 1.0 m Adc, I B = 0) .. Collector- Base Breakdown Voltage (I C = 10 µAdc, I E = 0) (I C =
- 10 µAdc, I E = 0) Emitter- Base Breakdown Voltage (IE= 10 µAdc, I C = 0) LMBT3904WT1 LMBT3906WT1 LMBT3904WT1 LMBT3906WT1...
