LMBT4403LT1
LMBT4403LT1 is Transistors manufactured by Leshan Radio Company.
LESHAN RADIO PANY, LTD.
General Purpose Transistors
PNP Silicon
- Pb- Free Package May be Available. The G- Suffix Denotes a
Pb- Free Lead Finish
.. Device
ORDERING INFORMATION
Package SOT- 23 Shipping 3000/Tape & Reel 3000/Tape & Reel
1 2
LMBT4403LT1G SOT- 23
SOT- 23 (TO- 236AB)
MAXIMUM RATINGS
Rating Collector- Emitter Voltage Collector- Base Voltage Emitter- Base Voltage Collector Current
- Continuous Symbol V CEO V CBO V EBO IC Value
- 40
- 40
- 5.0
- 600 Unit Vdc Vdc Vdc m Adc
1 BASE 3 COLLECTOR
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR
- 5 Board (1) T A =25 °C Derate above 25°C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate (2) T A = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 R θJA PD 556 300 2.4 417
- 55 to +150 Unit m W m W/°C °C/W m W m W/°C °C/W °C
2 EMITTER
R θJA T J , T stg
DEVICE MARKING
LMBT4403LT1 = 2T
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic Symbol V (BR)CEO
- 40 V (BR)CBO
- 40 V (BR)EBO
- 5.0 I BEV
- I CEX
- - 0.1
- 0.1 µAdc
- µAdc
- Vdc
- Vdc Min Max Unit Vdc
OFF CHARACTERISTICS
Collector- Emitter Breakdown Voltage (3) (I C...
