LMBT4403WT3G
LESHAN RADIO PANY, LTD.
General Purpose Transistors
PNP Silicon
- We declare that the material of product pliance with Ro HS requirements.
- S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
ORDERING INFORMATION
Device
LMBT4403WT1G S-LMBT4403WT1G LMBT4403WT3G S-LMBT4403WT3G
Marking
Shipping
2T 3000/Tape & Reel 2T 10000/Tape & Reel
MAXIMUM RATINGS Rating
Collector- Emitter Voltage Collector- Base Voltage Emitter- Base Voltage Collector Current
- Continuous
Symbol V CEO V CBO V EBO IC
Value
- 40
- 40
- 5.0
- 600
Unit Vdc Vdc Vdc m Adc
THERMAL CHARACTERISTICS Characteristic
Total Device Dissipation FR- 5 Board TA = 25°C
Thermal Resistance, Junction- to- Ambient
Junction and Storage Temperature
Symbol PD
Max 150
Unit m W
Rq JA
833 °C/W
TJ, Tstg
- 55 to +150 °C
LMBT4403WT1G S-LMBT4403WT1G
1 2
SC-70
1 BASE
3 COLLECTOR
2 EMITTER
DEVICE MARKING LMBT4403WT1G =...
