Datasheet Summary
1000 V, 220 mΩ PolarTM HiPerFETTM Power MOSFET
N-Channel Enhancement Mode
MOSFET Datasheet
Pinout Diagram (PLUS TO-264)
Tab D
GD S G: Gate; D: Drain; S: Emitter; Tab: Drain
Features
:
- Unclamped Inductive Switching (UIS) Rated
- Low Package Inductance
- Easy to Drive and to Protect
- N-Channel Enhancement Mode
- Fast Intrinsic Rectifier
- Avalanche Rated
- Low RDS(on) and QG
Advantages:
- Plus 264TM Package for Clip or Spring Mounting
- Space Savings
- High Power Density
Applications:
- Switched-Mode and Resonant-Mode Power Supplies
- DC-DC Converters
- Laser Drivers
- AC and DC Motor Controls
- Robotics and Servo Controls
Product Summary
Characteristic VDSS ID25...
