IXFL44N100P
Overview
- Silicon Chip on Direct-Copper-Bond Substrate
- High Power Dissipation
- Isolated Mounting Surface
- 2500 V Electrical Isolation
- Low Drain toTab Capacitance (<30pF)
- Rugged Polysilicon Gate Cell Structure
- Unclamped Inductive Switching (UIS) Rated
- Low Package Inductance
- Fast Intrinsic Rectifier
- Low RDS(on) and QG Advantages
