S6X8TS1 Features
* Surge capability > 10 A
* Blocking voltage (VDRM / VRRM) capability up to 800 V
* High dv/dt noise immunity
* Improved turn-off time (tq) < 25 µsec
* Sensitive gate for direct microprocessor interface
* Through-hole and surface-mount packages
Datasheet Details
S6X8TS1, S4X
793.92 KB
Thyristors.
This datasheet PDF includes multiple part numbers: S6X8TS1, S4X.
Please refer to the document for exact specifications by model.
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