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SP3312T Datasheet Preview

SP3312T Datasheet

3.3V 15A Diode Array

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TVS Diode Arrays (SPA®®Diodes)
Lightning Surge Protection- SP3312T Series
SP3312T Series 3.3V 15A Diode Array
RoHS Pb GREEN
Description
The SP3312T integrates 4 channels (2 differential pair) of
low capacitance diodes to protect sensitive I/O pins against
lightning induced surge events and ESD. This robust device
cwainthsoaufteplyearfbosromrbanucpetdoe1g5rAadpaetiroInEaCn6d10a0m0-i4n-im5 (utmp=8/20μs)
±30kV ESD per IEC61000-4-2 international standard. The
low loading capacitance makes the SP3312T ideal for
protecting high-speed signal pins.
Pinout
45
36
27
18
Functional Block Diagram
Pin1 and 8
Pin3 and 6
Pin2 and 7
Pin4 and 5
Features
• ESD, IEC61000-4-2,
±30kV contact, ±30kV air
• EFT, IEC61000-4-4, 40A
(t =5/50ns)
p
• Lightning, IEC61000-4-5,
15A (t =8/20µs)
p
• Low capacitance of 1.3pF
(TYP) per I/O
• Low leakage current of
0.01µA (TYP) at 3.3V
• Low variation in
capacitance vs.
bias voltage: 0.3pF
Typical(VR=0 to 2.5V)
• AEC-Q101 qualified
Applications
• 10/100/1000 Ethernet
• Integrated magnetics/
RJ45 connectors
• LAN/WAN Equipment
• Security Cameras
• Industrial Controls
• Notebook & Desktop
Computers
Life Support Note:
Not Intended for Use in Life Support or Life Saving Applications
The products shown herein are not designed for use in life sustaining or life saving
applications unless otherwise expressly indicated.
©2015 Littelfuse, Inc.
Specifications are subject to change without notice.
Revision: 02/16/15
11
SP3312T Series




Littelfuse

SP3312T Datasheet Preview

SP3312T Datasheet

3.3V 15A Diode Array

No Preview Available !

TVS Diode Arrays (SPA®®Diodes)
Lightning Surge Protection- SP3312T Series
Absolute Maximum Ratings
Thermal Information
Symbol
IPP
PPK
TOP
TSTOR
Parameter
Peak Current (tp=8/20μs)
Peak Pulse Power (tp=8/20µs)
Operating Temperature
Storage Temperature
Value
15.0
250
-40 to 125
-55 to 150
Units
A
W
ºC
°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress only rating and operation of the device
at these or any other conditions above those indicated in the operational sections of this
specification is not implied.
Parameter
Storage Temperature Range
Maximum Junction Temperature
Maximum Lead Temperature
(Soldering 20-40s)
Electrical Characteristics (TOP=25ºC)
Parameter
Symbol
Test Conditions
Reverse Standoff Voltage
Snap Back Voltage
Reverse Leakage Current
VRWM
VSB
ILEAK
Clamp Voltage1
VC
Dynamic Resistance2
ESD Withstand Voltage1
RDYN
VESD
ISB=50mA
VR=3.3V, I/O to GND
IPP=1A, tp=8/20µs, Fwd
IPP=2A, tp=8/20µs, Fwd
IPP=10A, tp=8/20µs, Fwd
TLP, tp=100ns, I/O to GND
IEC61000-4-2 (Contact)
IEC61000-4-2 (Air)
Variation in Capacitance
with Reverse Bias
Diode Capacitance1
CI/O-GND
Pins 1, 8 to 2, 7 and pins 3, 6 to 4, 5
VR= 0 to 2.5V, f= 1MHz
Reverse Bias=0V
Note:
1 Parameter is guaranteed by design and/or device characterization.
2 Transmission Line Pulse (TLP) with 100ns width and 200ps rise time.
Min
2.8
±30
±30
Typ
0.01
6.0
7.0
13.0
0.40
0.3
1.3
Rating
-55 to 150
150
260
Units
°C
°C
°C
Max Units
3.3 V
V
0.05 µA
V
V
V
kV
kV
pF
pF
Clamping Voltage vs IPP
Capacitance vs. Reverse Bias
20.0 1.5
15.0 1.2
0.9
10.0
0.6
5.0
0.3
0.0
0.0
5.0 10.0
Peak Pulse Current-IPP (A)
15.0
0.0
0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3 3.3
Bias Voltage (V)
©2015 Littelfuse, Inc.
Specifications are subject to change without notice.
Revision: 02/16/15
22
SP3312T Series


Part Number SP3312T
Description 3.3V 15A Diode Array
Maker Littelfuse
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