LT1N60 Datasheet | Longtium Microelectronics

Xi′an Longtium Microelectronics Technology Developing Co., Ltd. Features  High ruggedness  RDS(ON) (Max 9 Ω)@VGS=10V  Gate Charge (Max 6nC)  Improved dv/dt Capability  100% Avalanche Tested General Description  This power MOSFET is produced with advanced VDMOS technology of LONGTIUMIC.  This technology enable power MOSFET to have better characteristics,  Such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.  This power MOSFET is usually used at AC adaptors and SMPS . N-channel MOSFET N-channel MOSFET 2 Order Codes Item Sales Type 1 LT C 1N60C 2 LT I 1N60C 3 LT D 1N60C Marking LT1N60C LT1N60C LT1N60C Package...