LSC11N60
Description
Lon FETTM Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency.
Product Summary
VDS @ Tj,max
650V
RDS(ON),max
0.35Ω
30A
Qg,typ
34n C
Features
- Ultra low Rdson
- Ultra low gate charge (typ. Qg = 34n C)
- 100% UIS tested
- Ro HS pliant
N-Channel MOSFET
Pb
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Continuous drain current Pulsed drain current 1)
( TC = 25°C ) ( TC = 100°C )
Gate-Source voltage
Avalanche energy, single pulse 2)
Avalanche energy, repetitive 1) Avalanche current, repetitive 1)
Power Dissipation ( TC = 25°C )
- Derate above 25°C
Operating and Storage Temperature Range
Continuous diode forward current
Diode pulse current
VDSS ID
Symbol
IDM VGSS EAS EAR IAR PD
TJ, TSTG IS IS,pulse
600 11 7 30 ±30 350 12.5 11 125 1 -55 to +150 11...
