Datasheet Details
| Part number | LSC11N60 |
|---|---|
| Manufacturer | Lonten |
| File Size | 481.15 KB |
| Description | N-channel MOSFET |
| Datasheet |
 LSC11N60 Datasheet
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General Description
LonFETTM Power MOSFET is fabricated using advanced super junction technology.
The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency.
Key Features
- Ultra low Rdson.
- Ultra low gate charge (typ. Qg = 34nC).
- 100% UIS tested.
- RoHS compliant D G S N-Channel MOSFET Pb Absolute Maximum Ratings Parameter Drain-Source Voltage Continuous drain current Pulsed drain current 1) ( TC = 25°C ) ( TC = 100°C ) Gate-Source voltage Avalanche energy, single pulse 2) Avalanche energy, repetitive 1) Avalanche current, repetitive 1) Power Dissipation ( TC = 25°C ) - Derate above 25°C Operating and Storage Temperature Range Conti.