LSC11N65 - N-channel MOSFET

Product Overview

Datasheet Details

Part number	LSC11N65
Manufacturer	Lonten
File Size	480.89 KB
Description	N-channel MOSFET
Datasheet	LSC11N65 Datasheet
Additional preview pages of the LSC11N65 datasheet.

LSC11N65 Product details

Description

LonFETTM Power MOSFET is fabricated using advanced super junction technology.

The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency.

Features

Ultra low Rdson.
Ultra low gate charge (typ. Qg = 34nC).
100% UIS tested.
RoHS compliant D G S N-Channel MOSFET Pb Absolute Maximum Ratings Parameter Drain-Source Voltage Continuous drain current Pulsed drain current 1) ( TC = 25°C ) ( TC = 100°C ) Gate-Source voltage Avalanche energy, single pulse 2) Avalanche energy, repetitive 1) Avalanche current, repetitive 1) Power Dissipation ( TC = 25°C ) - Derate above 25°C Operating and Storage Temperature Range Conti.

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Published: Mar 30, 2021 |