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LSC20N65 Datasheet Preview

LSC20N65 Datasheet

N-channel MOSFET

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LSC20N65
LonFET
Lonten N-channel 650V, 20A, 0.18LonFETTM Power MOSFET
Description
LonFETTM Power MOSFET is fabricated using
advanced super junction technology. The resulting
device has extremely low on resistance, making it
especially suitable for applications which require
superior power density and outstanding efficiency.
Product Summary
VDS @ Tj,max
700V
RDS(ON),max
0.18
IDM
60A
Qg,typ
68nC
Features
Ultra low Rdson
Ultra low gate charge (typ. Qg = 68nC)
100% UIS tested
RoHS compliant
D
G
S
N-Channel MOSFET
Pb
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Continuous drain current
Pulsed drain current 1)
( TC = 25°C )
( TC = 100°C )
Gate-Source voltage
Avalanche energy, single pulse 2)
Avalanche energy, repetitive 1)
Avalanche current, repetitive 1)
Power Dissipation ( TC = 25°C )
- Derate above 25°C
Operating and Storage Temperature Range
Continuous diode forward current
Diode pulse current
Symbol
VDSS
ID
IDM
VGSS
EAS
EAR
IAR
PD
TJ, TSTG
IS
IS,pulse
LSC20N65
650
20
13
60
±30
700
20.5
20
205
1.64
-55 to +150
20
60
Unit
V
A
A
A
V
mJ
mJ
A
W
W/°C
°C
A
A
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Version 1.0 2012
RθJC
RθJA
Symbol
1
LSC20N65
0.61
60
Unit
°C/W
°C/W




Lonten

LSC20N65 Datasheet Preview

LSC20N65 Datasheet

N-channel MOSFET

No Preview Available !

Package Marking and Ordering Information
Device
Device Package
LSC20N65
TO-220
Electrical Characteristics Tc = 25°C unless otherwise noted
Parameter
Symbol
Test Condition
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Drain cut-off current
Gate leakage current, Forward
BVDSS
VGS(th)
IDSS
IGSSF
VGS=0 V, ID=0.25 mA
VDS=VGS, ID=0.25mA
VDS=600 V, VGS=0 V,
VGS=30 V, VDS=0 V
Gate leakage current, Reverse
Drain-source on-state resistance
IGSSR
RDS(on)
VGS=-30 V, VDS=0 V
VGS=10 V, ID=10 A
Tj = 25°C
Tj = 150°C
Gate resistance
RG
Dynamic characteristics
f=1 MHz, open drain
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Ciss
Coss
Crss
td(on)
tr
VDS = 25 V, VGS = 0 V,
f = 1 MHz
VDD = 300V, ID = 20A
RG = 25, VGS=10V
Turn-off delay time
td(off)
Fall time
tf
Gate charge characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Qgs
VDD=480 V, ID=20A,
Qgd
VGS=0 to 10 V
Qg
Gate plateau voltage
Reverse diode characteristics
Vplateau
Diode forward voltage
VSD
VGS=0 V, IF=10A
Reverse recovery time
trr
Reverse recovery charge
Qrr
Peak reverse recovery current
Irrm
Notes:
VR=50 V, IF=20A,
dIF/dt=100 A/μs
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS = 7A, VDD = 60V, RG = 25, Starting TJ = 25°C
LSC20N65
LonFET
Marking
LSC20N65
Min.
Typ.
Max.
Unit
650
-
-
V
2
5
V
-
-
1
μA
-
-
100
nA
-
-
-100
nA
-
-
0.15
0.18
-
0.41
-
-
1.8
-
-
2100
-
-
1700
-
pF
-
17
-
-
70
-
-
60
-
ns
-
250
-
-
55
-
-
27
-
-
20
-
nC
-
68
-
-
6.2
-
V
-
-
1.4
V
-
520
-
ns
-
5.7
-
μC
-
19
-
A
Version 1.0 2012
2


Part Number LSC20N65
Description N-channel MOSFET
Maker Lonten
PDF Download

LSC20N65 Datasheet PDF






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