LSC20N60 Description
LonFETTM Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency. Product Summary VDS @ Tj,max 650V RDS(ON),max 0.18Ω IDM 60A Qg,typ 68nC.
LSC20N60 Key Features
- Ultra low Rdson
- Ultra low gate charge (typ. Qg = 68nC)
- 100% UIS tested
- RoHS pliant