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LSD20N65 Datasheet Preview

LSD20N65 Datasheet

N-channel MOSFET

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LSD20N65
LonFET
Lonten N-channel 650V, 20A, 0.15Ω LonFETTM Power MOSFET
Description
LonFETTM Power MOSFET is fabricated using
advanced super junction technology. The resulting
device has extremely low on resistance, making it
especially suitable for applications which require
superior power density and outstanding efficiency.
Product Summary
VDS @ Tj,max
700V
RDS(on),max
0.15Ω
IDM
60A
Qg,typ
65nC
Features
Ultra low RDS(on)
Ultra low gate charge (typ. Qg = 65nC)
100% UIS tested
RoHS compliant
D
G
S
N-Channel MOSFET
Pb
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Continuous drain current
Pulsed drain current 1)
( TC = 25°C )
( TC = 100°C )
Gate-Source voltage
Avalanche energy, single pulse 2)
Avalanche energy, repetitive 1)
Avalanche current, repetitive 1)
Power Dissipation ( TC = 25°C )
- Derate above 25°C
Operating and Storage Temperature Range
Continuous diode forward current
Diode pulse current
Symbol
VDSS
ID
IDM
VGSS
EAS
EAR
IAR
PD
TJ, TSTG
IS
IS,pulse
LSD20N65
650
20
13
60
±30
700
20.5
20
34
0.28
-55 to +150
20
60
Unit
V
A
A
A
V
mJ
mJ
A
W
W/°C
°C
A
A
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Version 5.0 2013
Symbol
RθJC
RθJA
1
LSD20N65
3.6
80
Unit
°C/W
°C/W
www.lonten.cc




Lonten

LSD20N65 Datasheet Preview

LSD20N65 Datasheet

N-channel MOSFET

No Preview Available !

Package Marking and Ordering Information
Device
Device Package
LSD20N65
TO-220F
Electrical Characteristics Tc = 25°C unless otherwise noted
Parameter
Symbol
Test Condition
Static characteristics
Drain-source breakdown voltage
BVDSS
VGS=0 V, ID=0.25 mA
Gate threshold voltage
VGS(th)
VDS=VGS, ID=0.25mA
Drain cut-off current
Gate leakage current, Forward
IDSS
IGSSF
VDS=600 V, VGS=0 V,
VGS=30 V, VDS=0 V
Gate leakage current, Reverse
IGSSR
VGS=-30 V, VDS=0 V
Drain-source on-state resistance
RDS(on)
Gate resistance
RG
Dynamic characteristics
VGS=10 V, ID=10 A
Tj = 25°C
Tj = 150°C
f=1 MHz, open drain
Input capacitance
Output capacitance
Ciss
VDS = 25 V, VGS = 0 V,
Coss
f = 1 MHz
Reverse transfer capacitance
Crss
Turn-on delay time
Rise time
td(on)
VDD = 380V, ID = 10A
tr
RG = 4.7Ω, VGS=10V
Turn-off delay time
td(off)
Fall time
tf
Gate charge characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse diode characteristics
Qgs
Qgd
Qg
Vplateau
VDD=480 V, ID=10A,
VGS=0 to 10 V
Diode forward voltage
Reverse recovery time
Reverse recovery charge
VSD
VGS=0 V, IF=10A
trr
VR=50 V, IF=20A,
Qrr
dIF/dt=100 A/μs
Peak reverse recovery current
Irrm
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS = 7A, VDD = 60V, RG = 25Ω, Starting TJ = 25°C
LSD20N65
LonFET
Marking
LSD20N65
Min.
Typ.
Max.
Unit
650
-
-
V
2
5
V
-
-
1
μA
-
-
100
nA
-
-
-100
nA
-
-
0.13
0.15
Ω
-
0.39
-
-
1.8
-
Ω
-
2100
-
-
1700
-
pF
-
17
-
-
25
-
-
21
-
ns
-
60
-
-
4
-
-
12
-
-
31
-
nC
-
65
-
-
5.7
-
V
-
-
1.4
V
-
520
-
ns
-
5.7
-
μC
-
19
-
A
Version 5.0 2013
2
www.lonten.cc


Part Number LSD20N65
Description N-channel MOSFET
Maker Lonten
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LSD20N65 Datasheet PDF






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