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MMSS8550 - PNP Silicon Plastic-Encapsulate Transistor

Features

  • SOT-23 Plastic-Encapsulate Transistors.
  • Capable of 0.625Watts(Tamb=25OC) of Power Dissipation.
  • Collector-current 1.5A.
  • Collector-base Voltage 40V.
  • Operating and storage junction temperature range: -55OC to +150OC.
  • Marking Code: Y2 Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter OFF.

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Datasheet Details

Part number MMSS8550
Manufacturer Lunsure Electronic
File Size 36.68 KB
Description PNP Silicon Plastic-Encapsulate Transistor
Datasheet download datasheet MMSS8550 Datasheet

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    Full PDF Text Transcription

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    Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 MMSS8550 Features • SOT-23 Plastic-Encapsulate Transistors • Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. • Collector-current 1.5A • Collector-base Voltage 40V • Operating and storage junction temperature range: -55OC to +150OC • Marking Code: Y2 Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter OFF CHARACTERISTICS Min Max Units V(BR)CBO Collector-Base Breakdown Voltage (IC=100uAdc, IE=0) V(BR)CEO Collector-Emitter Breakdown Voltage (IC=0.1mAdc, IB=0) V(BR)EBO Emitter-Base Breakdown Voltage (IE=100uAdc, IC=0) ICBO Collector Cutoff Current (VCB=40Vdc, IE=0) ICEO Collector Cutoff Current (VCE=20Vdc, IB=0) IEBO Emitter Cutoff Current (VEB=5.
    Published: |