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M-pulse Microwave
M-pulse Microwave

MP4TD0670 Datasheet Preview

MP4TD0670 Datasheet

Silicon Bipolar MMIC Cascadable Amplifier

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MP4TD0670 pdf
M-Pulse Microwave
Silicon Bipolar MMIC
Cascadable Amplifier
MP4TD0670
Features
Cascadable 50Ω Gain Block
3dB Bandwidth: DC to 0.8 GHz
18.5 dB Typical Gain @ 0.5 GHz
Unconditionally Stable (k>1)
Low Voltage Operation
Hermetic Gold-Ceramic Microstrip Package
Tape and Reel Packaging Available
V4.00
Gold-Ceramic Microstrip Package Outline1,2
.040
1,02
4 GND
RF INPUT
RF OUT
AND BIAS
.020
0,51
Description
M-Pulse's MP4TD0670 is a high performance silicon
bipolar MMIC housed in a hermetic high reliability
package for surface mount usage. The MP4TD0670 is
useful where a general purpose 50Ω gain block with
lower (3.0 dB) noise figure is required. Typical
applications include narrow and wide band IF and RF
amplifiers in industrial and military applications.
13
.004 ±.002
0,1±0,05
2 GND
.070
1,78
.035
0,89
The MP4TD0670 is fabricated using a 10 GHz fT silicon
bipolar technology that features gold metalization and IC
passivation for increased performance and reliability.
TYPICAL POWER GAIN vs FREQUENCY
22
20
18
16
14 Id=16mA
12
10
8
6
4
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0
0.1 1
FREQUENCY (GH z)
10
.495 ±.030
12,57 ±0,76
Notes: (unless otherwise specified)
1. Dimensions are in / mm
2. Tolerance: in .xxx = ±.005; mm .xx = ±.13
Pin Configuration
Pin Number
Pin Description
1 RF Input
2&4
AC/DC Ground
3 RF Output and DC Bias
Ordering Information
Model No.
Package
MP4TD0670
Ceramic
MP4TD0670T
Tape and Reel
Electrical Specifications @ TA = +25°C, Id = 16 mA, Z0 = 50Ω
Symbol Parameters
Test Conditions
Gp
ΔGp
Power Gain (S212)
Gain Flatness
f = 0.1 GHz
f = 0.1 to 0.6 GHz
f3 dB
3 dB Bandwidth
-
SWRin Input SWR
f = 0.1 to 1.5 GHz
SWRout Output SWR
f = 0.1 to 1.5 GHz
P1 dB Output Power @ 1 dB Gain Compression f = 0.5 GHz
NF 50 Ω Noise Figure
f = 0.5 GHz
IP3 Third Order Intercept Point
f = 0.5 GHz
tD Group Delay
f = 0.5 GHz
Vd Device Voltage
-
dV/dT Device Voltage Temperature Coefficient
-
Units
dB
dB
GHz
-
-
dBm
dB
dBm
ps
V
mV/°C
Min.
18.5
-
-
-
-
-
-
-
-
3.1
-
Typ.
19.5
±0.7
0.8
1.8
1.8
4.5
3.0
14.5
200
3.5
-8.0
Max.
22
±1.0
-
-
-
-
3.5
-
-
3.9
-
Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________
PH (408) 432-1480 FX (408) 432-3440
1



M-pulse Microwave
M-pulse Microwave

MP4TD0670 Datasheet Preview

MP4TD0670 Datasheet

Silicon Bipolar MMIC Cascadable Amplifier

No Preview Available !

MP4TD0670 pdf
Silicon Bipolar MMIC Cascadable Amplifier
Absolute Maximum Ratings1
Parameter
Absolute Maximum
Device Current
50 mA
Power Dissipation2,3
200 mW
RF Input Power
+20 dBm
Junction Temperature
200°C
Storage Temperature
-65°C to +200°C
Thermal Resistance: θjc = 150°C/W
1. Exceeding these limits may cause permanent damage.
2. Case Temperature (Tc) = 25 °C.
3. Derate at 6.7 mW/°C for Tc > 170°C.
MP4TD0670
Typical Bias Configuration
Rbias
Vcc - Vd
Id =
Rbias
Vcc > 5.5 V
RFC (Optional)
4
C (DC Block)
C (DC Block)
3
IN MP4TD0670
1 Vd =3.5 V
2
OUT
Typical Performance Curves @ Id = 16 mA, TA = +25°C (unless otherwise noted)
DEVICE CURRENT vs DEVICE VOLTAGE
25
20
15
10
5
0
01
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2
Vd, DEVICE VOLTAGE (V)
3
4
POWER GAIN vs CURRENT
25
20
15
10
0.1 GH z
0.5 GH z
1.0 GH z
2.0 GH z
5
0
10
15 20 25 30 35
Id, DEVICE CURRENT (mA)
40
RETURN LOSS vs FREQUENCY
0
-5 Input
-10
O utput
-15
-20
-25
-30
0 .1
1
FREQUENCY (GH z)
10
POUT @ 1dB GAIN COMPRESSION
vs FREQUENCY
12
10
8
Id=30mA
6
4
2
0
0.1
1
FREQUENCY (GH z)
Id=20mA
Id=16mA
10
Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________
PH (408) 432-1480 FX (408) 432-3440
2


Part Number MP4TD0670
Description Silicon Bipolar MMIC Cascadable Amplifier
Maker M-pulse Microwave
Total Page 3 Pages
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