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M-pulse Microwave
M-pulse Microwave

MP4TD0836 Datasheet Preview

MP4TD0836 Datasheet

(MP4TD0835 / MP4TD0836) Silicon Bipolar MMIC Cascadable Amplifier

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MP4TD0836 pdf
M-Pulse Microwave
Silicon Bipolar MMIC
Cascadable Amplifier
Features
Cascadable 50Ω Gain Block
High Gain: 32.5 dB Typical Gain @ 0.1 GHz
18.5 dB Typical Gain @ 1.0 GHz
Low Noise Figure: 3.2 dB Typical @ 1.0 GHz
Cost Effective Ceramic Microstrip Package
Tape and Reel Packaging Available
Unconditionally Stable @ k>1
Description
M-Pulse's MP4TD0835 and MP4TD0836 are high
performance silicon bipolar MMIC housed in a cost
effective ceramic microstrip package. The MP4TD0835
and MP4TD0836 are designed for use where a low
noise (3.2 dB typical) general purpose 50Ω gain block is
required. Typical applications include narrow and wide
band IF and RF amplifiers in industrial and military
applications.
The MP4TD0835 and MP4TD0836 are fabricated using
a 10 GHz fT silicon bipolar technology that features gold
metalization and IC passivation for increased
performance and reliability.
TYPICAL POWER GAIN vs FREQUENCY
35
30
Id=36mA
25
20
15
www.Da1 0taSheet4U.com
5
0
0 .1
1
FREQUENCY (GHz)
10
MP4TD0835, MP4TD0836
Ceramic Microstrip Package Outline1,2,3
Available in short lead version as MP4TD0836.
4 GND
.085
2,16
RF INPUT
RF OUT
AND BIAS
.020
0,51
13
2 GND
.057
1,45
.100
2,55
ø .083
2,11
.022
0,56
.006 ±.002
0,15±0,05
.455 ±.030
1,56 ±0,76 MA4TD0835
0.018 ±0.010
4,57 ±0,25 MA4TD0836
Notes: (unless otherwise specified)
1. Dimensions are in / mm
2. Tolerance: in .xxx = ±.005; mm .xx = ±.13
3. See last page of data sheet for short lead Micro-X
Pin Configuration
Pin Number
Pin Description
1 RF Input
2&4
AC/DC Ground
3 RF Output and DC Bias
Electrical Specifications @ TA = +25°C, Id = 36 mA, Z0 = 50 Ω
Symbol Parameters
Test Conditions
Gp Power Gain (S212)
f = 0.1 GHz
f = 1.0 GHz
f = 4.0 GHz
SWRin Input SWR
f = 0.3 to 3.0 GHz
SWRout Output SWR
f = 0.4 to 3.0 GHz
P1 dB Output Power @ 1 dB Gain Compression f = 1.0 GHz
NF 50 Ω Noise Figure
f = 1.0 GHz
IP3 Third Order Intercept Point
f = 1.0 GHz
tD Group Delay
f = 1.0 GHz
Vd Device Voltage
-
dV/dT Device Voltage Temperature Coefficient
-
Units
dB
dB
dB
-
-
dBm
dB
dBm
ps
V
mV/°C
Min.
-
17.5
-
-
-
-
-
-
-
7.0
-
Typ.
32.5
18.5
7.0
2.0
1.5
13.5
3.2
27.0
125
7.8
-17.0
Max.
-
19.0
-
-
-
-
-
-
-
8.4
-
Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________
PH (408) 432-1480 FX (408) 432-3440
1



M-pulse Microwave
M-pulse Microwave

MP4TD0836 Datasheet Preview

MP4TD0836 Datasheet

(MP4TD0835 / MP4TD0836) Silicon Bipolar MMIC Cascadable Amplifier

No Preview Available !

MP4TD0836 pdf
Silicon Bipolar MMIC Cascadable Amplifier
Absolute Maximum Ratings1
Parameter
Absolute Maximum
Device Current
80 mA
Power Dissipation2,3
750 mW
RF Input Power
+20 dBm
Junction Temperature
200°C
Storage Temperature
-65°C to +200°C
Thermal Resistance: θjc = 175°C/W
1. Exceeding these limits may cause permanent damage.
2. Case Temperature (Tc) = 25 °C.
3. Derate at 6.7 mW/°C for Tc > 69°C.
MP4TD0835, MP4TD0836
Typical Bias Configuration
Rbias
Vcc - Vd
Id =
R b ia s
RFC (Optional)
4
C (DC Block)
IN
MP4TD0835
MP4TD0836
3
C (DC Block)
1 Vd = 7.8 V
2
Vcc > 10 V
OUT
Typical Performance Curves @ Id = 36 mA, TA = +25°C (unless otherwise noted)
DEVICE CURRENT vs DEVICE VOLTAGE
40
35
30
25
20
15
10
5
0
02468
Vd, DEVICE VOLTAGE (V)
10
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POWER GAIN vs CURRENT
35
30
25
20
15
10
5
0
10
20 30
Id, DEVICE CURRENT (mA)
0.1 GH z
1.0 GH z
2.0 GH z
3.0 GH z
40
50
RETURN LOSS vs FREQUENCY
0
-2
-4
-6
-8
-10
-12
-14
-16
-18
0 .1
1
FREQUENCY (GHz)
Input
O utput
10
POUT @ 1dB GAIN COMPRESSION
vs FREQUENCY
18
Id=40mA
16
14
Id=36mA
12
10
8
6
4
0.1
1
FREQUENCY (GH z)
10
Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________
PH (408) 432-1480 FX (408) 432-3440
2


Part Number MP4TD0836
Description (MP4TD0835 / MP4TD0836) Silicon Bipolar MMIC Cascadable Amplifier
Maker M-pulse Microwave
Total Page 3 Pages
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